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GA1L3Z

Renesas Electronics

GA1L3Z by Renesas Electronics

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Terminal Position: DUAL; Minimum DC Current Gain (hFE): 100;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Northwest PG Solutions

USA . 1,395 parts In-Stock

1+ parts

$2.702

100+ parts

-

1k+ parts

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10k+ parts

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1,395

$2.702

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-

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Assy Fe

Spain . 3,200 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

-

3,200

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-

-

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Alle Elektronik GmbH

Germany . 3,092 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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3,092

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-

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Native Components

USA . 528 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$2.382

10k+ parts

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528

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$2.382

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Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) GA1L3Z attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Renesas Electronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

6000 ns

Maximum Turn On Time (ton):

200 ns

Trade Compliance

GA1L3Z Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Renesas Electronics

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