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GA1L3Z-L37

Renesas Electronics

GA1L3Z-L37 by Renesas Electronics

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A; No. of Elements: 1; Minimum DC Current Gain (hFE): 200;

Median Price

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Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Northwest PG Solutions

USA . 2,172 parts In-Stock

1+ parts

$2.653

100+ parts

-

1k+ parts

-

10k+ parts

-

2,172

$2.653

-

-

-

Native Components

USA . 429 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$2.340

10k+ parts

-

429

-

-

$2.340

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Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) GA1L3Z-L37 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Renesas Electronics

Specs

Maximum Collector Current (IC):

Minimum DC Current Gain (hFE):

200

No. of Elements:

1

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Transistor Element Material:

SILICON

Trade Compliance

GA1L3Z-L37 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Renesas Electronics

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