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2SK3390

Renesas Electronics

2SK3390 by Renesas Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 20 W; Terminal Form: GULL WING; Transistor Element Material: SILICON;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Northwest PG Solutions

USA . 1,088 parts In-Stock

1+ parts

$3.036

100+ parts

-

1k+ parts

-

10k+ parts

-

1,088

$3.036

-

-

-

Native Components

USA . 76 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$2.677

10k+ parts

-

76

-

-

$2.677

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Technical Specifications

RF Power Field Effect Transistors (FET) 2SK3390 attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from Renesas Electronics

Specs

Case Connection:

SOURCE

Minimum DS Breakdown Voltage:

17 V

Maximum Drain Current (Abs) (ID):

1 A

Maximum Drain Current (ID):

1 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G2

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

2SK3390 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Renesas Electronics

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