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PHM25NQ10T

Philips Semiconductors

PHM25NQ10T by Philips Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 69.4 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (Abs) (ID): 31.7 A;

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3

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1k+

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Digiode

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Vyrian

USA . 2,375 parts In-Stock

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Anansix

USA . 2,297 parts In-Stock

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One Stop Electronics

USA . 686 parts In-Stock

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$43.050

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Kepictronics

USA . 2,546 parts In-Stock

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Corphita

USA . 2,503 parts In-Stock

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UNI Independent Distributors

Spain . 1,737 parts In-Stock

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Perfect Parts

USA . 580 parts In-Stock

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Technical Specifications

Power Field Effect Transistors (FET) PHM25NQ10T attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Philips Semiconductors

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

31.7 A

Maximum Drain Current (ID):

31.7 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e0

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Trade Compliance

PHM25NQ10T Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Philips Semiconductors

In September 2006, Philips completed the sale of an 80.1% stake in Philips Semiconductors to a consortium of private equity investors consisting of KKR, Bain Capital, Silver Lake Partners, Apax Partners and AlpInvest Partners. The new company name NXP (from Next eXPerience) was announced on August 31, 2006, and the company was officially launched during the Internationale Funkausstellung (IFA) consumer electronics show in Berlin. The newly independent NXP was ranked as one of the world's top 10 semiconductor companies

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