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BLA1011S-200

Philips Semiconductors

BLA1011S-200 by Philips Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 700 W; No. of Elements: 1; Maximum Operating Temperature: 150 Cel;

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Digiode

USA . 4,767 parts In-Stock

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Anansix

USA . 2,735 parts In-Stock

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Vyrian

USA . 45 parts In-Stock

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Native Components

USA . 12 parts In-Stock

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$19.602

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Northwest PG Solutions

USA . 411 parts In-Stock

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$19.406

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One Stop Electronics

USA . 1,631 parts In-Stock

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$61.050

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A-Z Elektronik GmbH

Germany . 6,783 parts In-Stock

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UNI Independent Distributors

Spain . 6,136 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,522 parts In-Stock

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Corphita

USA . 4,521 parts In-Stock

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Technical Specifications

Power Field Effect Transistors (FET) BLA1011S-200 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Philips Semiconductors

Specs

Configuration:

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Trade Compliance

BLA1011S-200 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Philips Semiconductors

In September 2006, Philips completed the sale of an 80.1% stake in Philips Semiconductors to a consortium of private equity investors consisting of KKR, Bain Capital, Silver Lake Partners, Apax Partners and AlpInvest Partners. The new company name NXP (from Next eXPerience) was announced on August 31, 2006, and the company was officially launched during the Internationale Funkausstellung (IFA) consumer electronics show in Berlin. The newly independent NXP was ranked as one of the world's top 10 semiconductor companies

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