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SZNZ8F33VSMX2WT5G

Onsemi

SZNZ8F33VSMX2WT5G by Onsemi

SZNZ8F33VSMX2WT5G by Onsemi is a Zener diode with a 33V nominal reference voltage, suitable for applications requiring precise voltage regulation. It features a max reverse current of 0.1uA and operates in temperatures ranging from -65 to 150 °C. With a small outline package style and nickel palladium gold terminal finish, it is ideal for surface mount designs in automotive electronics.

Median Price

$0.059

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 120,000 parts In-Stock

1+ parts

-

100+ parts

$0.061

1k+ parts

$0.051

10k+ parts

$0.045

120,000

-

$0.061

$0.051

$0.045

Verical

USA . 120,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.057

120,000

-

-

-

$0.057

Distributors (In-Stock)

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Digiode

USA . 1,724 parts In-Stock

1+ parts

$0.048

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1,724

$0.048

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Flip Electronics

USA . 120,000 parts In-Stock

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120,000

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Vyrian

USA . 5,777 parts In-Stock

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5,777

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 325 parts In-Stock

1+ parts

$0.045

100+ parts

-

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325

$0.045

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Corohmni

South Africa . 175 parts In-Stock

1+ parts

$0.050

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-

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175

$0.050

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AZTECH Wire

Italy . 1,204 parts In-Stock

1+ parts

$18.860

100+ parts

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1,204

$18.860

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SupplyDigital Components

Austria . 6,398 parts In-Stock

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6,398

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Kulean Microsystems

USA . 6,193 parts In-Stock

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6,193

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Problanco Electronics

Mexico . 2,389 parts In-Stock

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2,389

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UHIMA Technologies

Türkiye . 507 parts In-Stock

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507

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TANS Electronics

Latvia . 77 parts In-Stock

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77

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Overview

Experience the superior quality and reliability of the SZNZ8F33VSMX2WT5G Zener Diode by Onsemi. Manufactured with precision and expertise, this product is perfect for a wide range of applications. From regulating voltage in electronic circuits to protecting sensitive components, this Zener diode offers unmatched value and performance. Trust Onsemi to deliver innovative solutions that meet your needs and exceed your expectations. Upgrade your projects with the SZNZ8F33VSMX2WT5G and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good durability and protection for the internal components of the diode.

Working Test Current: 5 mA

Suitable for various low-power applications, ensuring safe operation.

Surface Mount: YES

Allows for easy and efficient installation on PCBs, saving space and reducing assembly time.

Maximum Reverse Current: 0.1 uA

Ensures minimal leakage current, improving overall efficiency and performance.

Reverse Test Voltage: 26 V

Provides reliable protection against reverse polarity and voltage spikes.

Maximum Voltage Tolerance: 2.3%

Ensures consistent and accurate voltage regulation in various operating conditions.

Maximum Operating Temperature: 150 °C

Allows the diode to function reliably in high-temperature environments.

Maximum Power Dissipation: 0.25 W

Can handle moderate power loads without overheating, maintaining stability.

Technology: ZENER

Utilizes Zener diode technology for precise voltage regulation and protection.

Technical Specifications

Zener Diodes SZNZ8F33VSMX2WT5G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

95 ohm

Maximum Forward Voltage (VF):

.9 V

JESD-30 Code:

R-PDSO-N2

JESD-609 Code:

e4

Maximum Knee Impedance:

130 ohm

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.25 W

Reference Standard:

AEC-Q101

Nominal Reference Voltage:

33 V

Maximum Reverse Current:

.1 uA

Reverse Test Voltage:

26 V

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

2.3 %

Working Test Current:

5 mA

Trade Compliance

SZNZ8F33VSMX2WT5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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