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SZ1SMB5924BT3G

Onsemi

SZ1SMB5924BT3G by Onsemi

SZ1SMB5924BT3G by Onsemi is a Zener diode with 9.1V nominal voltage, 41.2mA test current, and 4 ohm dynamic impedance. Ideal for applications requiring precise voltage regulation in automotive electronics due to AEC-Q101 compliance and -65 to 150 °C operating temperature range.

Median Price

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Lifecycle Status

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5

In-Stock Inventory

1k+

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Chip Stock

USA . 17,400 parts In-Stock

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Vyrian

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Flip Electronics

USA . 2,500 parts In-Stock

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Digiode

USA . 1,487 parts In-Stock

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Nova Conductors

Japan . 86 parts In-Stock

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Advanced Electronics

New Zealand . 600 parts In-Stock

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$0.060

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$0.057

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$0.057

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Aztec Data Supply Inc.

USA . 2,288 parts In-Stock

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$0.150

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Semicontronic

India . 1,211 parts In-Stock

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$2.010

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$1.960

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$1.950

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Ampacity Inc.

Singapore . 1,064 parts In-Stock

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$3.010

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AZTECH Wire

Italy . 331 parts In-Stock

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$12.760

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QUARKTWIN TECHNOLOGY LTD

USA . 19,188 parts In-Stock

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Kulean Microsystems

USA . 7,422 parts In-Stock

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TANS Electronics

Latvia . 7,027 parts In-Stock

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SupplyDigital Components

Austria . 5,447 parts In-Stock

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Problanco Electronics

Mexico . 5,213 parts In-Stock

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Lixinc

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Argo Parts USA

USA . 1,663 parts In-Stock

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Continental Prestige Electronics

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Corphita

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UHIMA Technologies

Türkiye . 785 parts In-Stock

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Modulus Dynamics

Lithuania . 700 parts In-Stock

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Corohmni

South Africa . 353 parts In-Stock

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Robosynatics

Brazil . 200 parts In-Stock

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Lucentia Tech

USA . 200 parts In-Stock

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Bastille Electronics

Australia . 100 parts In-Stock

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Overview

Discover the SZ1SMB5924BT3G by Onsemi, a top-tier manufacturer in the Zener Diodes category. This high-quality product offers customers unmatched reliability and performance in a compact, surface-mount package. With a nominal reference voltage of 9.1V and a maximum power dissipation of 0.55W, this Zener diode is perfect for a wide range of applications. Trust Onsemi to deliver cutting-edge technology and superior quality components for your next project. Unlock the benefits and value that the SZ1SMB5924BT3G brings to your designs today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the zener diode, making it suitable for a wide range of applications.

Working Test Current: 41.2 mA

Ensures reliable performance under normal operating conditions without compromising the stability of the zener voltage.

Surface Mount: YES

Allows for easy installation on PCBs, saving space and simplifying the assembly process.

Maximum Voltage Tolerance: 5%

Ensures precise voltage regulation within a tight tolerance, making it ideal for sensitive electronic circuits.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, enabling the zener diode to operate efficiently in various environments.

Reference Standard: AEC-Q101

Complies with automotive industry standards, ensuring high reliability and quality for automotive applications.

Nominal Reference Voltage: 9.1 V

Provides a stable reference voltage for circuit design, ensuring consistent and accurate performance.

Technical Specifications

Zener Diodes SZ1SMB5924BT3G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

4 ohm

JESD-30 Code:

R-PDSO-L2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.55 W

Reference Standard:

AEC-Q101

Nominal Reference Voltage:

9.1 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

5 %

Working Test Current:

41.2 mA

Trade Compliance

SZ1SMB5924BT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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