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SMF05T1

Onsemi

SMF05T1 by Onsemi

The Onsemi SMF05T1 is a Trans Voltage Suppressor Diode with 4 elements in a common anode configuration. It has a max non-repetitive peak reverse power dissipation of 200W and breakdown voltage of 6.6V. Ideal for transient suppression applications requiring a small outline package with gull wing terminals.

Median Price

$0.061

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 637,000 parts In-Stock

1+ parts

-

100+ parts

$0.066

1k+ parts

$0.055

10k+ parts

$0.049

637,000

-

$0.066

$0.055

$0.049

DigiKey

USA . 637,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.060

637,000

-

-

-

$0.060

Verical

USA . 576,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.061

576,000

-

-

-

$0.061

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 762 parts In-Stock

1+ parts

$0.051

100+ parts

-

1k+ parts

-

10k+ parts

-

762

$0.051

-

-

-

Digiode

USA . 1,502 parts In-Stock

1+ parts

$0.051

100+ parts

-

1k+ parts

-

10k+ parts

-

1,502

$0.051

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 579 parts In-Stock

1+ parts

$0.049

100+ parts

-

1k+ parts

-

10k+ parts

-

579

$0.049

-

-

-

Corohmni

South Africa . 203 parts In-Stock

1+ parts

$0.051

100+ parts

-

1k+ parts

-

10k+ parts

-

203

$0.051

-

-

-

Continental Prestige Electronics

USA . 637,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.046

10k+ parts

-

637,000

-

-

$0.046

-

Kulean Microsystems

USA . 8,250 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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8,250

-

-

-

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TANS Electronics

Latvia . 7,747 parts In-Stock

1+ parts

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7,747

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Problanco Electronics

Mexico . 1,345 parts In-Stock

1+ parts

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1,345

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SupplyDigital Components

Austria . 613 parts In-Stock

1+ parts

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613

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UHIMA Technologies

Türkiye . 206 parts In-Stock

1+ parts

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206

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Overview

Upgrade your electronics with the SMF05T1 by Onsemi, a reliable and high-quality transient suppression device that offers superior protection for your devices. Manufactured by Onsemi, a trusted name in the industry, this product is designed to provide maximum performance and durability. Ideal for a wide range of applications, this common anode diode features four elements for enhanced efficiency. With a nominal breakdown voltage of 6.6V and a maximum clamping voltage of 12.5V, this diode ensures your electronics are safeguarded against voltage spikes and surges. Trust the SMF05T1 to deliver unmatched quality and peace of mind for all your electronic needs.

Feature Benefit Bullets

Package Body Material PLASTIC/EPOXY

Plastic/Epoxy package body material provides durability and reliability for the transient suppression device.

Config COMMON ANODE, 4 ELEMENTS

Common anode configuration with 4 elements ensures effective transient suppression and protection for electronic circuits.

Surface Mount YES

Surface mount capability allows for easy and convenient installation on circuit boards.

Maximum Non Repetitive Peak Reverse Power Dissipation 200 W

High maximum non repetitive peak reverse power dissipation ensures the device can handle transient surges effectively.

Nominal Breakdown Voltage 6.6 V

Nominal breakdown voltage of 6.6V provides protection for sensitive electronic components against overvoltage events.

Package Shape RECTANGULAR

Rectangular package shape allows for efficient use of space on circuit boards.

No. of Terminals 5

Having 5 terminals provides connectivity options and flexibility for circuit integration.

Package Style (Meter) SMALL OUTLINE

Small outline package style is space-saving and suitable for compact electronic designs.

Terminal Finish Tin/Lead (Sn/Pb)

Tin/Lead terminal finish ensures good solderability and connectivity during assembly.

Terminal Position DUAL

Dual terminal position enhances stability and reliability of the device when connected in a circuit.

Minimum Breakdown Voltage 6 V

Having a minimum breakdown voltage of 6V ensures protection even at lower voltage levels.

Peak Reflow Temperature °C 235

Peak reflow temperature of 235 °C allows for reliable soldering during manufacturing processes.

Maximum Breakdown Voltage 7.2 V

Maximum breakdown voltage of 7.2V ensures protection against higher voltage transients.

Diode Type TRANS VOLTAGE SUPPRESSOR DIODE

The Trans Voltage Suppressor diode type is specifically designed for transient suppression applications, offering superior protection.

Technology AVALANCHE

Avalanche technology ensures fast response and high energy handling capabilities for transient suppression.

Terminal Form GULL WING

Gull wing terminal form provides mechanical strength and stability during installation.

No. of Elements 4

Having 4 elements enhances the effectiveness of transient suppression and protection for the device.

Maximum Repetitive Peak Reverse Voltage 5 V

Maximum repetitive peak reverse voltage of 5V allows for continuous protection against transient events.

Polarity UNIDIRECTIONAL

Unidirectional polarity ensures protection in one direction, which is suitable for many electronic applications.

Maximum Clamping Voltage 12.5 V

Maximum clamping voltage of 12.5V limits the voltage level to protect sensitive components during transient events.

Diode Element Material SILICON

Silicon diode element material provides reliable and efficient transient suppression performance.

Technical Specifications

Transient Suppression Devices SMF05T1 attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

7.2 V

Minimum Breakdown Voltage:

6 V

Nominal Breakdown Voltage:

6.6 V

Maximum Clamping Voltage:

12.5 V

Config:

COMMON ANODE, 4 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e0

Maximum Non Repetitive Peak Reverse Power Dissipation:

200 W

No. of Elements:

4

No. of Terminals:

5

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity:

UNIDIRECTIONAL

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

5 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

SMF05T1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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