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SMF05CT2G

Onsemi

SMF05CT2G by Onsemi

SMF05CT2G by Onsemi is a transient suppression device with 5 common anode elements. It has a max power dissipation of 100W and breakdown voltage of 6.7V. Ideal for applications requiring protection against voltage transients in electronic circuits, it operates b/w -40 to 125°C.

Median Price

$0.106

Lifecycle Status

Suppliers In-Stock

18

In-Stock Inventory

1k+

Distributors (Authorized)

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Arrow

USA . 8 parts In-Stock

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$0.028

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8

$0.028

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Rochester

USA . 4,888 parts In-Stock

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$0.110

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$0.110

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$0.110

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4,888

$0.110

$0.110

$0.110

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Mouser Electronics

USA . 6,568 parts In-Stock

1+ parts

$0.590

100+ parts

$0.231

1k+ parts

$0.174

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6,568

$0.590

$0.231

$0.174

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Chip1Stop

Japan . 18,000 parts In-Stock

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$0.102

18,000

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$0.102

Verical

USA . 12,000 parts In-Stock

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$0.090

12,000

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$0.090

DigiKey

USA . 1,742 parts In-Stock

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$0.116

1,742

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$0.116

Distributors (In-Stock)

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Digiode

USA . 115 parts In-Stock

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$0.104

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$0.104

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Nova Conductors

Japan . 31 parts In-Stock

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$0.138

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Chip Stock

USA . 76,650 parts In-Stock

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NAC Semi

USA . 33,000 parts In-Stock

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$0.135

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Flip Electronics

USA . 21,000 parts In-Stock

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Bristol Electronics

USA . 18,673 parts In-Stock

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Sea View Technologies

USA . 15,391 parts In-Stock

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Vyrian

USA . 8,963 parts In-Stock

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Contempo Components LLC

USA . 6,000 parts In-Stock

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6,000

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Semtec, LLC

USA . 2,799 parts In-Stock

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Microfarads

USA . 2,759 parts In-Stock

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Atlantic Semiconductor

USA . 500 parts In-Stock

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500

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Distributors (Availability)

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Modulus Dynamics

Lithuania . 34,403 parts In-Stock

1+ parts

$0.058

100+ parts

$0.058

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$0.058

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34,403

$0.058

$0.058

$0.058

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Ampacity Inc.

Singapore . 9,268 parts In-Stock

1+ parts

$0.073

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9,268

$0.073

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Semicontronic

India . 8,484 parts In-Stock

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$0.073

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$0.071

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$0.071

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8,484

$0.073

$0.071

$0.071

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Corohmni

South Africa . 193 parts In-Stock

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$0.088

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193

$0.088

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Corphita

USA . 2,236 parts In-Stock

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$0.099

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$0.099

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Continental Prestige Electronics

USA . 6,990 parts In-Stock

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$0.123

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$0.121

6,990

$0.123

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$0.121

Argo Parts USA

USA . 2,679 parts In-Stock

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$0.123

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$0.120

2,679

$0.123

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$0.120

Advanced Electronics

New Zealand . 100 parts In-Stock

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$0.169

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$0.160

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$0.160

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100

$0.169

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$0.160

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Aztec Data Supply Inc.

USA . 3,550 parts In-Stock

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$0.190

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Metaverse IC Inc.

Canada . 99,000 parts In-Stock

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Perfect Parts

USA . 47,161 parts In-Stock

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Kepictronics

USA . 30,000 parts In-Stock

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Authorized Procurement Solutions

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Lixinc

USA . 10,239 parts In-Stock

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Kulean Microsystems

USA . 6,740 parts In-Stock

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Problanco Electronics

Mexico . 6,215 parts In-Stock

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SupplyDigital Components

Austria . 6,114 parts In-Stock

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TANS Electronics

Latvia . 5,447 parts In-Stock

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Eastek

USA . 3,000 parts In-Stock

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Assy Fe

Spain . 1,795 parts In-Stock

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Infinite Electronics LLP (Excess)

. 1,108 parts In-Stock

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Netroflash

USA . 1,000 parts In-Stock

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$0.135

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$0.131

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$0.128

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Robosynatics

Brazil . 300 parts In-Stock

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$6.161

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$6.161

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$6.161

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$6.161

$6.161

Lucentia Tech

USA . 300 parts In-Stock

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$6.161

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$6.161

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$6.161

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$6.161

$6.161

$6.161

UHIMA Technologies

Türkiye . 162 parts In-Stock

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Overview

Experience superior transient suppression with the SMF05CT2G by Onsemi, a top-tier manufacturer known for their high-quality products. Perfect for a variety of applications, this common anode diode offers unmatched protection against voltage spikes and surges, ensuring the safety of your electronic devices. With a maximum clamping voltage of 12.5V and a nominal breakdown voltage of 6.7V, this diode provides peace of mind and reliability. Trust Onsemi to deliver exceptional performance and longevity with the SMF05CT2G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the device lightweight and durable, perfect for electronic applications.

Maximum Non Repetitive Peak Reverse Power Dissipation: 100 W

With a high power dissipation capacity, this device can handle sudden voltage spikes effectively and protect sensitive electronic components.

Nominal Breakdown Voltage: 6.7 V

The nominal breakdown voltage ensures that the device activates at the specified voltage level, providing reliable transient suppression.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature allows the device to function in a wide range of environments without losing efficiency.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature ensures that the device remains operational even in extreme cold conditions.

No. of Terminals: 6

Having 6 terminals allows for easy installation and connection in electronic circuits.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The trans voltage suppressor diode type effectively suppresses voltage transients and protects connected devices from damage.

Polarity: UNIDIRECTIONAL

The unidirectional polarity ensures that voltage spikes are suppressed in one direction only, suitable for applications where protection is needed in a single direction.

Technical Specifications

Transient Suppression Devices SMF05CT2G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

7.2 V

Minimum Breakdown Voltage:

6.2 V

Nominal Breakdown Voltage:

6.7 V

Maximum Clamping Voltage:

12.5 V

Config:

COMMON ANODE, 5 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

100 W

No. of Elements:

5

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

5 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

40

Trade Compliance

SMF05CT2G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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