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SMF05CT2

Onsemi

SMF05CT2 by Onsemi

The Onsemi SMF05CT2 is a transient suppression device with 5 common anode elements, offering a max non-repetitive peak reverse power dissipation of 100W. With a breakdown voltage of 6.7V and unidirectional polarity, it is ideal for applications requiring protection against voltage transients in electronic circuits.

Median Price

$0.066

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 16,060 parts In-Stock

1+ parts

-

100+ parts

$0.066

1k+ parts

$0.055

10k+ parts

$0.049

16,060

-

$0.066

$0.055

$0.049

DigiKey

USA . 16,060 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.080

16,060

-

-

-

$0.080

Verical

USA . 15,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.061

15,000

-

-

-

$0.061

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,168 parts In-Stock

1+ parts

$0.051

100+ parts

-

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-

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2,168

$0.051

-

-

-

Chip Stock

USA . 76,910 parts In-Stock

1+ parts

-

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76,910

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DigiKey Marketplace

USA . 16,060 parts In-Stock

1+ parts

-

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16,060

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-

-

-

Vyrian

USA . 6,404 parts In-Stock

1+ parts

-

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6,404

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-

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Nova Conductors

Japan . 50 parts In-Stock

1+ parts

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50

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-

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 15,478 parts In-Stock

1+ parts

$0.046

100+ parts

-

1k+ parts

-

10k+ parts

-

15,478

$0.046

-

-

-

Corphita

USA . 819 parts In-Stock

1+ parts

$0.049

100+ parts

-

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819

$0.049

-

-

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Corohmni

South Africa . 184 parts In-Stock

1+ parts

$0.054

100+ parts

-

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184

$0.054

-

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Aztec Data Supply Inc.

USA . 2,358 parts In-Stock

1+ parts

$0.190

100+ parts

-

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2,358

$0.190

-

-

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AZTECH Wire

Italy . 1,035 parts In-Stock

1+ parts

$17.100

100+ parts

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1,035

$17.100

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Problanco Electronics

Mexico . 7,469 parts In-Stock

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7,469

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Kulean Microsystems

USA . 7,465 parts In-Stock

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7,465

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TANS Electronics

Latvia . 5,155 parts In-Stock

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5,155

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SupplyDigital Components

Austria . 4,926 parts In-Stock

1+ parts

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4,926

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RC Electronics

USA . 3,060 parts In-Stock

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3,060

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Argo Parts USA

USA . 1,190 parts In-Stock

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1,190

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Continental Prestige Electronics

USA . 1,090 parts In-Stock

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1,090

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UHIMA Technologies

Türkiye . 170 parts In-Stock

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170

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Bastille Electronics

Australia . 50 parts In-Stock

1+ parts

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50

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Overview

Discover the superior protection offered by the Onsemi SMF05CT2 transient suppression device. With a common anode configuration and 5 elements, this small outline package provides reliable defense against voltage spikes. Ideal for a variety of applications, this diode offers a nominal breakdown voltage of 6.7V and a maximum clamping voltage of 12.5V. Trust in Onsemi's expertise to safeguard your electronics with this high-quality, high-performance solution.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the device.

Maximum Non Repetitive Peak Reverse Power Dissipation: 100 W

Can handle high transient power levels, making it suitable for applications where surges in voltage may occur.

Nominal Breakdown Voltage: 6.7 V

Helps to protect the circuit by diverting excess voltage above the breakdown voltage, preventing damage to sensitive components.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Specifically designed for transient suppression, ensuring optimal performance in suppressing voltage spikes.

Maximum Clamping Voltage: 12.5 V

Limits the voltage across the protected circuit to a safe level, preventing damage to connected devices.

Technical Specifications

Transient Suppression Devices SMF05CT2 attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

7.2 V

Minimum Breakdown Voltage:

6.2 V

Nominal Breakdown Voltage:

6.7 V

Maximum Clamping Voltage:

12.5 V

Config:

COMMON ANODE, 5 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

100 W

No. of Elements:

5

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity:

UNIDIRECTIONAL

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

5 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

SMF05CT2 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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