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SMF05CT1

Onsemi

SMF05CT1 by Onsemi

SMF05CT1 by Onsemi is a transient suppression device with 5 common anode elements. It has a max non-repetitive peak reverse power dissipation of 100W and breakdown voltage of 6.7V. Ideal for applications requiring protection against voltage transients in electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 78,700 parts In-Stock

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Vyrian

USA . 6,673 parts In-Stock

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Diverse Electronics

Canada . 2,928 parts In-Stock

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Digiode

USA . 2,002 parts In-Stock

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PC Components Company LLC

USA . 1,960 parts In-Stock

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Bristol Electronics

USA . 1,960 parts In-Stock

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Nova Conductors

Japan . 500 parts In-Stock

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500

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 2,397 parts In-Stock

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$0.150

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$0.150

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Ampacity Inc.

Singapore . 1,290 parts In-Stock

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$2.010

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$2.010

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AZTECH Wire

Italy . 210 parts In-Stock

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$7.629

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210

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RC Electronics

USA . 65,000 parts In-Stock

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TANS Electronics

Latvia . 5,778 parts In-Stock

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Continental Prestige Electronics

USA . 5,614 parts In-Stock

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SupplyDigital Components

Austria . 4,622 parts In-Stock

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Argo Parts USA

USA . 3,054 parts In-Stock

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Problanco Electronics

Mexico . 2,400 parts In-Stock

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Corphita

USA . 1,385 parts In-Stock

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Kulean Microsystems

USA . 1,084 parts In-Stock

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Kepictronics

USA . 842 parts In-Stock

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UHIMA Technologies

Türkiye . 775 parts In-Stock

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Corohmni

South Africa . 414 parts In-Stock

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Bastille Electronics

Australia . 300 parts In-Stock

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Overview

Enhance your electronics projects with the high-quality SMF05CT1 transient suppression device by Onsemi. As a reputable manufacturer in the industry, Onsemi delivers reliable products that meet strict quality standards. This common anode, 5-element diode is perfect for protecting sensitive components from voltage spikes, ensuring optimal performance and durability. Upgrade your circuit designs with the SMF05CT1 and experience the peace of mind knowing your devices are safeguarded against unexpected power surges. Elevate your projects with Onsemi's trusted technology and enjoy seamless operation without compromise.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and resistance to environmental factors, ensuring a longer lifespan for the device.

Maximum Non Repetitive Peak Reverse Power Dissipation: 100 W

High power dissipation capability allows the device to handle sudden spikes in voltage without getting damaged, providing reliable protection for the circuit.

Nominal Breakdown Voltage: 6.7 V

The specific breakdown voltage ensures that the device activates at the desired voltage level, effectively suppressing any overvoltage events.

Peak Reflow Temperature °C: 235

High peak reflow temperature tolerance enables easy and reliable soldering during assembly, ensuring proper connection in the circuit.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Trans voltage suppressor diode type is specifically designed to suppress voltage spikes and protect the circuit from overvoltage, making it an ideal choice for transient suppression devices.

Technical Specifications

Transient Suppression Devices SMF05CT1 attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

7.2 V

Minimum Breakdown Voltage:

6.2 V

Nominal Breakdown Voltage:

6.7 V

Maximum Clamping Voltage:

12.5 V

Config:

COMMON ANODE, 5 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

100 W

No. of Elements:

5

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

5 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

SMF05CT1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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