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SMF05T1G

Onsemi

SMF05T1G by Onsemi

SMF05T1G by Onsemi is a transient suppression device with 4 common anode elements, offering a max non-repetitive peak reverse power dissipation of 200W. With a breakdown voltage of 6.6V and unidirectional polarity, it is ideal for applications requiring protection against voltage transients in electronic circuits.

Median Price

$0.209

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 1 parts In-Stock

1+ parts

$0.131

100+ parts

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1

$0.131

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Mouser Electronics

USA . 5,964 parts In-Stock

1+ parts

$0.250

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$0.198

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$0.157

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$0.137

5,964

$0.250

$0.198

$0.157

$0.137

DigiKey

USA . 4,521 parts In-Stock

1+ parts

$0.260

100+ parts

$0.198

1k+ parts

$0.157

10k+ parts

$0.127

4,521

$0.260

$0.198

$0.157

$0.127

Newark

USA . 2,984 parts In-Stock

1+ parts

$0.326

100+ parts

$0.254

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$0.213

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2,984

$0.326

$0.254

$0.213

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Element14

Singapore . 3,084 parts In-Stock

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-

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$0.288

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$0.199

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$0.196

3,084

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$0.288

$0.199

$0.196

EBV Elektronik

Germany . 3,000 parts In-Stock

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3,000

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Flip Electronics (Authorized)

USA . 2,849 parts In-Stock

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2,849

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Chip1Stop

Japan . 1,672 parts In-Stock

1+ parts

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$0.103

1k+ parts

$0.097

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1,672

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$0.103

$0.097

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Verical

USA . 672 parts In-Stock

1+ parts

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$0.130

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672

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$0.130

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Farnell

UK . 84 parts In-Stock

1+ parts

-

100+ parts

$0.168

1k+ parts

$0.133

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$0.116

84

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$0.168

$0.133

$0.116

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,165 parts In-Stock

1+ parts

$0.140

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2,165

$0.140

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Digiode

USA . 2,126 parts In-Stock

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$0.203

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2,126

$0.203

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Flip Electronics

USA . 8,849 parts In-Stock

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8,849

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ComSIT Distribution GmbH

Germany . 3,903 parts In-Stock

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Lighthouse Electronics, Inc.

USA . 2,475 parts In-Stock

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2,475

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Cyclops Electronics Ltd

UK . 1,096 parts In-Stock

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Speed Components Ltd

Israel . 575 parts In-Stock

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575

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Distributors (Availability)

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Advanced Electronics

New Zealand . 150 parts In-Stock

1+ parts

$0.048

100+ parts

$0.044

1k+ parts

$0.039

10k+ parts

-

150

$0.048

$0.044

$0.039

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Corohmni

South Africa . 57 parts In-Stock

1+ parts

$0.147

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57

$0.147

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Component Stockers USA

USA . 17,507 parts In-Stock

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$0.190

100+ parts

$0.160

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$0.120

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17,507

$0.190

$0.160

$0.120

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Corphita

USA . 1,239 parts In-Stock

1+ parts

$0.193

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$0.193

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Metaverse IC Inc.

Canada . 99,000 parts In-Stock

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Kepictronics

USA . 60,000 parts In-Stock

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Formix International (Excess)

India . 54,000 parts In-Stock

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Lixinc

USA . 14,280 parts In-Stock

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Problanco Electronics

Mexico . 8,009 parts In-Stock

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

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Perfect Parts

USA . 5,966 parts In-Stock

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Kulean Microsystems

USA . 5,106 parts In-Stock

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TANS Electronics

Latvia . 4,700 parts In-Stock

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Assy Fe

Spain . 1,977 parts In-Stock

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1,977

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Continental Prestige Electronics

USA . 1,545 parts In-Stock

1+ parts

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$0.247

1k+ parts

$0.150

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$0.118

1,545

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$0.247

$0.150

$0.118

UHIMA Technologies

Türkiye . 408 parts In-Stock

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408

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SupplyDigital Components

Austria . 389 parts In-Stock

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389

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Overview

Enhance your electronic devices with the SMF05T1G by Onsemi - a top-of-the-line Transient Suppression Device that guarantees superior quality and performance. Designed with precision and expertise by Onsemi, this product ensures reliable protection against voltage spikes and surges, making it an essential component for various applications. With its common anode configuration and compact design, the SMF05T1G provides customers with unmatched value, benefits, and advantages, making it the ideal choice for all your transient suppression needs. Upgrade your devices today with the SMF05T1G and experience unparalleled quality and protection like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the components inside, ensuring a longer lifespan for the product.

Maximum Non Repetitive Peak Reverse Power Dissipation: 200 W

Ensures the device can handle high power surges and protect connected components effectively.

Nominal Breakdown Voltage: 6.6 V

Offers reliable protection against voltage spikes by activating at the specified voltage threshold.

Maximum Operating Temperature: 150 °C

Allows the device to function effectively in high temperature environments without compromising performance.

Minimum Operating Temperature: -55 °C

Ensures the device can operate in low temperature conditions, making it versatile for different environments.

Technical Specifications

Transient Suppression Devices SMF05T1G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

7.2 V

Minimum Breakdown Voltage:

6 V

Nominal Breakdown Voltage:

6.6 V

Maximum Clamping Voltage:

12.5 V

Config:

COMMON ANODE, 4 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

200 W

No. of Elements:

4

No. of Terminals:

5

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

5 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

40

Trade Compliance

SMF05T1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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