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SE5532AD8R2

Onsemi

SE5532AD8R2 by Onsemi

SE5532AD8R2 by Onsemi is a dual operational amplifier with 3000uV max input offset voltage and 100dB nominal CMRR. Ideal for military applications, it operates at -55 to 125 °C, with a unity gain bandwidth of 10kHz. This Op Amp has a compact package style and low bias current making it suitable for precision signal processing in harsh environments.

Median Price

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Lifecycle Status

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4

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1k+

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Chip Stock

USA . 61,000 parts In-Stock

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Digiode

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Vyrian

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Anansix

USA . 1,892 parts In-Stock

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One Stop Electronics

USA . 1,404 parts In-Stock

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$5.410

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Kulean Microsystems

USA . 7,060 parts In-Stock

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Corphita

USA . 5,857 parts In-Stock

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TANS Electronics

Latvia . 4,992 parts In-Stock

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UNI Independent Distributors

Spain . 4,207 parts In-Stock

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SupplyDigital Components

Austria . 4,093 parts In-Stock

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Problanco Electronics

Mexico . 2,825 parts In-Stock

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Microchip USA

USA . 2,693 parts In-Stock

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UHIMA Technologies

Türkiye . 393 parts In-Stock

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Kepictronics

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Overview

Experience superior performance and reliability with the SE5532AD8R2 Operational Amplifier by Onsemi. Designed with precision and quality in mind, this product offers unmatched value for a wide range of applications. From audio amplification to signal processing, this Op Amp delivers exceptional results with its high voltage gain, low bias current, and excellent common mode rejection ratio. Trust Onsemi's reputation for excellence and elevate your projects with the SE5532AD8R2.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes the product lightweight and durable, ideal for applications where portability and reliability are important.

Maximum Input Offset Voltage: 3000 uV

The low maximum input offset voltage ensures minimal errors in the output signal, making this operational amplifier suitable for precision and accuracy-critical tasks.

Surface Mount: YES

Being surface mountable allows for easy integration onto PCBs, saving space and simplifying the assembly process.

Nominal Common Mode Reject Ratio: 100 dB

The high common mode reject ratio ensures effective rejection of unwanted signal common to both input terminals, leading to cleaner output signals in noisy environments.

Nominal Supply Voltage / Vsup (V): 15

The nominal supply voltage of 15V allows for stable and reliable operation under standard operating conditions.

Technology: BIPOLAR

The bipolar technology used in this operational amplifier ensures high input impedance, low output impedance, and low noise, making it suitable for a wide range of applications.

Nominal Unity Gain Bandwidth: 10000 kHz

The high unity gain bandwidth of 10MHz allows for high-speed signal processing, making this op amp ideal for applications that require fast response times.

Technical Specifications

Operational Amplifiers (Op Amps) SE5532AD8R2 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Onsemi

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

±15 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Frequency Compensation:

Yes

Low-Offset:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

10 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

100 dB

Input Offset Voltage Limit:

3000 uV

Minimum Voltage Gain:

20000

Nominal Slew Rate:

9 V/us

Peak Bias Current:

700 nA

Maximum Bias Current (IIB) @25 °C:

400 nA

Operational Characteristics

Nominal Supply Voltage:

15 V

Maximum Supply Voltage:

22 V

Maximum Negative Supply Voltage:

-15 V

Minimum Negative Supply Voltage:

-22 V

Lowest Operating Temperature:

-55 °C (-67 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

235 °C (455 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

13 mA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Tin/Lead

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e0

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

SE5532AD8R2 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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