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SD12CT1G

Onsemi

SD12CT1G by Onsemi

SD12CT1G by Onsemi is a single transient suppression device with a max non-repetitive peak reverse power dissipation of 350W. It operates in temperatures ranging from -65°C to 150°C and has a min breakdown voltage of 13.3V. This diode type trans voltage suppressor diode is ideal for applications requiring bidirectional polarity protection in electronic circuits.

Median Price

$0.107

Lifecycle Status

Suppliers In-Stock

21

In-Stock Inventory

1k+

Distributors (Authorized)

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Chip1Stop

Japan . 132,000 parts In-Stock

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$0.086

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$0.086

Verical

USA . 12,000 parts In-Stock

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$0.107

12,000

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$0.107

Element14

Singapore . 8,457 parts In-Stock

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$0.226

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$0.144

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$0.142

8,457

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$0.226

$0.144

$0.142

Farnell

UK . 7,877 parts In-Stock

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$0.132

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$0.103

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$0.084

7,877

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$0.132

$0.103

$0.084

Arrow

USA . 3,000 parts In-Stock

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$0.089

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$0.089

Distributors (In-Stock)

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Digiode

USA . 1,159 parts In-Stock

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$0.380

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Nova Conductors

Japan . 50 parts In-Stock

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$1.000

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IBS Electronics

USA . 687,000 parts In-Stock

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$0.109

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Chip Stock

USA . 49,990 parts In-Stock

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Cyclops Electronics Ltd

UK . 30,501 parts In-Stock

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Vyrian

USA . 7,996 parts In-Stock

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NAC Semi

USA . 6,000 parts In-Stock

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QIE Inc.

USA . 3,000 parts In-Stock

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Bristol Electronics

USA . 2,918 parts In-Stock

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Atlantic Semiconductor

USA . 2,900 parts In-Stock

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Sensible Micro Corp

USA . 2,197 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 1,576 parts In-Stock

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ComSIT Distribution GmbH

Germany . 326 parts In-Stock

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Goldney Electronics S.L.

Spain . 120 parts In-Stock

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PC Components Company LLC

USA . 18 parts In-Stock

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Prism Electronics

USA . 5 parts In-Stock

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5

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Distributors (Availability)

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Advanced Electronics

New Zealand . 450 parts In-Stock

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$0.027

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$0.025

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$0.025

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450

$0.027

$0.025

$0.025

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Ampacity Inc.

Singapore . 61,874 parts In-Stock

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$0.069

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$0.069

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Semicontronic

India . 59,226 parts In-Stock

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$0.069

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$0.067

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$0.067

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$0.069

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$0.067

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Corohmni

South Africa . 389 parts In-Stock

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$0.084

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Aztec Data Supply Inc.

USA . 4,624 parts In-Stock

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$0.110

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Continental Prestige Electronics

USA . 4,472 parts In-Stock

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$0.132

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$0.129

4,472

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Argo Parts USA

USA . 2,759 parts In-Stock

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$0.132

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2,759

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Corphita

USA . 261 parts In-Stock

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$0.360

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Microchip USA

USA . 5,009 parts In-Stock

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$0.784

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Netroflash

USA . 50 parts In-Stock

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$1.000

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Benley Electronics

USA . 1 parts In-Stock

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$1.000

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Perfect Parts

USA . 243,602 parts In-Stock

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RC Electronics

USA . 58,604 parts In-Stock

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GreenTree Electronics

Israel . 30,000 parts In-Stock

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Kepictronics

USA . 24,000 parts In-Stock

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Futuretech Components

Singapore . 6,000 parts In-Stock

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S.R.D Solutions

India . 6,000 parts In-Stock

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iodParts Technologies Inc.

India . 5,300 parts In-Stock

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Legend Electronics Inc. (Excess)

USA . 4,784 parts In-Stock

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Problanco Electronics

Mexico . 3,745 parts In-Stock

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SupplyDigital Components

Austria . 2,665 parts In-Stock

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Authorized Procurement Solutions

USA . 2,554 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,022 parts In-Stock

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Lixinc

USA . 1,796 parts In-Stock

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Kulean Microsystems

USA . 1,709 parts In-Stock

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FE SAS

France . 1,000 parts In-Stock

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Robosynatics

Brazil . 900 parts In-Stock

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Lucentia Tech

USA . 900 parts In-Stock

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$1.501

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$1.501

$1.501

TANS Electronics

Latvia . 769 parts In-Stock

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Speed Components Ltd (Excess)

Israel . 420 parts In-Stock

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UHIMA Technologies

Türkiye . 324 parts In-Stock

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Overview

Discover the reliability and performance of Onsemi's SD12CT1G transient suppression device, designed to protect your electronic circuits from voltage spikes. With its high-quality construction and advanced technology, this single-configured diode offers exceptional protection for a wide range of applications. From industrial equipment to consumer electronics, this small outline package ensures optimal performance in any environment. Trust Onsemi to deliver the value and peace of mind you need to keep your devices running smoothly.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the component, ensuring long-lasting performance in various environments.

Maximum Non Repetitive Peak Reverse Power Dissipation: 350 W

Capable of handling high transient power surges, protecting the connected circuitry from damage.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for use in industrial applications where heat resistance is crucial.

Minimum Operating Temperature: -65 °C

Capable of operating in extremely low temperatures, providing reliability in diverse environmental conditions.

Minimum Breakdown Voltage: 13.3 V

Effectively clamps voltage spikes above this threshold, safeguarding sensitive components from overvoltage damage.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Specifically designed to suppress voltage transients by diverting excess current away from the circuit, ensuring protection against voltage spikes.

Technical Specifications

Transient Suppression Devices SD12CT1G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Minimum Breakdown Voltage:

13.3 V

Maximum Clamping Voltage:

19 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

350 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

BIDIRECTIONAL

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

12 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SD12CT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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