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SD12CT3

Onsemi

SD12CT3 by Onsemi

SD12CT3 by Onsemi is a bidirectional TRANS VOLTAGE SUPPRESSOR DIODE with 12V peak reverse voltage and 19V clamping voltage. It is surface mountable with Tin/Lead finish, ideal for transient suppression in electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,432 parts In-Stock

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Digiode

USA . 60 parts In-Stock

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60

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

SupplyDigital Components

Austria . 6,871 parts In-Stock

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6,871

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Kulean Microsystems

USA . 6,847 parts In-Stock

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Problanco Electronics

Mexico . 2,661 parts In-Stock

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Corphita

USA . 1,082 parts In-Stock

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TANS Electronics

Latvia . 912 parts In-Stock

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Corohmni

South Africa . 450 parts In-Stock

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UHIMA Technologies

Türkiye . 81 parts In-Stock

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Overview

Unlock superior protection for your electronic devices with the SD12CT3 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality and reliability in their transient suppression devices. Ideal for a wide range of applications, this diode offers bidirectional polarity and maximum clamping voltage of 19V, ensuring your equipment stays safe from voltage spikes. Experience peace of mind knowing that your devices are safeguarded with the SD12CT3, providing unmatched value and benefits for all your protection needs.

Feature Benefit Bullets

Surface Mount: YES

Surface mount technology allows for easy and convenient installation on printed circuit boards, saving space and reducing assembly time.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/Lead terminal finish provides good solderability and reliability during the manufacturing process.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Trans Voltage Suppressor diodes are specifically designed for transient voltage suppression, making this product suitable for protection against voltage spikes and surges.

Maximum Repetitive Peak Reverse Voltage: 12 V

With a maximum reverse voltage of 12V, this product is effective in protecting sensitive electronics from reverse polarity and voltage spikes up to 12V.

Polarity: BIDIRECTIONAL

Bidirectional polarity allows the device to protect against voltage spikes in both directions, offering versatile protection for a wider range of applications.

Maximum Clamping Voltage: 19 V

The maximum clamping voltage of 19V indicates the level at which the device will start to conduct, diverting excess voltage away from the protected circuit to prevent damage.

Technical Specifications

Transient Suppression Devices SD12CT3 attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Clamping Voltage:

19 V

JESD-609 Code:

e0

Polarity:

BIDIRECTIONAL

Maximum Repetitive Peak Reverse Voltage:

12 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Trade Compliance

SD12CT3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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