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SD12T1G

Onsemi

SD12T1G by Onsemi

The Onsemi SD12T1G is a unidirectional Trans Voltage Suppressor Diode with 14.53V breakdown voltage and 350W peak reverse power dissipation. Ideal for transient suppression in electronics, it operates b/w -55 to 150 °C and complies with IEC standards for reliability.

Median Price

$0.072

Lifecycle Status

Suppliers In-Stock

24

In-Stock Inventory

1k+

Distributors (Authorized)

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Arrow

USA . 87,000 parts In-Stock

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$0.051

87,000

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$0.051

RS (Exports)

UK . 12,200 parts In-Stock

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$0.167

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$0.107

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$0.107

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Verical

USA . 5,081 parts In-Stock

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$0.069

5,081

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Rochester

USA . 5,081 parts In-Stock

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$0.074

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$0.061

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$0.055

5,081

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$0.074

$0.061

$0.055

Chip1Stop

Japan . 7 parts In-Stock

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Digiode

USA . 1,893 parts In-Stock

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Nova Conductors

Japan . 57 parts In-Stock

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NAC Semi

USA . 528,000 parts In-Stock

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Chip Stock

USA . 148,500 parts In-Stock

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Vyrian

USA . 83,603 parts In-Stock

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ComSIT Distribution GmbH

Germany . 13,876 parts In-Stock

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Bristol Electronics

USA . 7,776 parts In-Stock

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Semtec, LLC

USA . 6,000 parts In-Stock

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Atlantic Semiconductor

USA . 4,776 parts In-Stock

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EMSNET

USA . 3,110 parts In-Stock

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PC Components Company LLC

USA . 3,000 parts In-Stock

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Flip Electronics

USA . 2,830 parts In-Stock

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Florida Circuit

USA . 1,770 parts In-Stock

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Cyclops Electronics Ltd

UK . 1,733 parts In-Stock

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Inventory MP

USA . 1,700 parts In-Stock

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Flex Direct, LLC

USA . 1,300 parts In-Stock

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Conversion2

USA . 1,000 parts In-Stock

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Sensible Micro Corp

USA . 505 parts In-Stock

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Astute Electronics Inc

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 147 parts In-Stock

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$0.010

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Semicontronic

India . 98,005 parts In-Stock

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$0.037

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$0.036

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$0.036

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98,005

$0.037

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$0.036

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Ampacity Inc.

Singapore . 96,569 parts In-Stock

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$0.044

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Corohmni

South Africa . 180 parts In-Stock

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Corphita

USA . 918 parts In-Stock

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Advanced Electronics

New Zealand . 70 parts In-Stock

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Continental Prestige Electronics

USA . 5,594 parts In-Stock

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Argo Parts USA

USA . 1,609 parts In-Stock

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Perfect Parts

USA . 5,431,030 parts In-Stock

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Infinite Electronics LLP (Excess)

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Kepictronics

USA . 120,000 parts In-Stock

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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Authorized Procurement Solutions

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Eastek

USA . 18,000 parts In-Stock

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Lixinc

USA . 17,586 parts In-Stock

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Allen Electronics Distributors

USA . 12,650 parts In-Stock

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$0.085

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SupplyDigital Components

Austria . 6,983 parts In-Stock

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TANS Electronics

Latvia . 6,521 parts In-Stock

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Futuretech Components

Singapore . 5,553 parts In-Stock

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Problanco Electronics

Mexico . 4,692 parts In-Stock

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Kulean Microsystems

USA . 3,761 parts In-Stock

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GreenTree Electronics

Israel . 3,000 parts In-Stock

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Assy Fe

Spain . 1,225 parts In-Stock

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UHIMA Technologies

Türkiye . 611 parts In-Stock

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Overview

The SD12T1G by Onsemi is a top-quality Transient Suppression Device designed to protect your electronic equipment from voltage spikes and surges. Manufactured by Onsemi, a trusted industry leader, this device offers reliable performance and peace of mind. Perfect for applications requiring protection against electrical transients, the SD12T1G delivers exceptional value with its high power dissipation capability and precise breakdown voltage. Say goodbye to worries about damaging your sensitive electronics - trust the SD12T1G to keep them safe and sound.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components of the device.

Maximum Non Repetitive Peak Reverse Power Dissipation: 350 W

Can handle high surge currents and protect connected equipment effectively.

Nominal Breakdown Voltage: 14.53 V

Ensures effective suppression of transient voltage spikes above this value.

Maximum Operating Temperature: 150 °C

Can operate effectively in high temperature environments.

Minimum Operating Temperature: -55 °C

Can withstand low temperature conditions without performance degradation.

Reference Standard: IEC-6100-4-4, 4-5; IEC-61000-4-2, 4-4

Complies with international standards for transient suppression devices, ensuring reliability and quality.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Specifically designed for transient voltage suppression applications, providing efficient protection.

Maximum Clamping Voltage: 19 V

Provides effective clamping of transient voltages to a safe level for connected equipment.

Technical Specifications

Transient Suppression Devices SD12T1G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

15.75 V

Minimum Breakdown Voltage:

13.3 V

Nominal Breakdown Voltage:

14.53 V

Maximum Clamping Voltage:

19 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

350 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Reference Standard:

IEC-6100-4-4, 4-5; IEC-61000-4-2, 4-4

Maximum Repetitive Peak Reverse Voltage:

12 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SD12T1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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