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SD12T3G

Onsemi

SD12T3G by Onsemi

SD12T3G by Onsemi is a unidirectional Trans Voltage Suppressor Diode with 14.53V breakdown voltage, 350W peak reverse power dissipation, and 25V clamping voltage. Ideal for transient suppression in electronics to protect against voltage spikes.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,491 parts In-Stock

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Digiode

USA . 1,154 parts In-Stock

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1,154

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Problanco Electronics

Mexico . 7,486 parts In-Stock

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TANS Electronics

Latvia . 3,987 parts In-Stock

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Corphita

USA . 935 parts In-Stock

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935

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Corohmni

South Africa . 430 parts In-Stock

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UHIMA Technologies

Türkiye . 247 parts In-Stock

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SupplyDigital Components

Austria . 161 parts In-Stock

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Kulean Microsystems

USA . 139 parts In-Stock

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Overview

Enhance your electronic devices with the high-quality SD12T3G transient suppression device from Onsemi. Designed to protect against voltage spikes and surges, this product offers peace of mind for your sensitive equipment. With a robust design and reliable performance, Onsemi is a trusted manufacturer known for delivering top-notch solutions. Ideal for a wide range of applications, this device ensures optimal protection without compromising on efficiency. Invest in the SD12T3G today and safeguard your electronics with ease.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components, ensuring a long lifespan for the device.

Maximum Non Repetitive Peak Reverse Power Dissipation: 350 W

The high power dissipation capability allows the device to handle sudden spikes in voltage without getting damaged, providing reliable protection for connected equipment.

Nominal Breakdown Voltage: 14.53 V

The precise breakdown voltage ensures that the device activates at the right voltage level, effectively suppressing transient voltage spikes.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this device can function efficiently even in harsh environments, making it suitable for a wide range of applications.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of Trans Voltage Suppressor Diode ensures fast response time and low clamping voltages, offering effective protection against transient voltage surges.

Technical Specifications

Transient Suppression Devices SD12T3G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

15.75 V

Minimum Breakdown Voltage:

13.3 V

Nominal Breakdown Voltage:

14.53 V

Maximum Clamping Voltage:

25 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Reverse Power Dissipation:

350 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

12 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

SD12T3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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