Loading...

SBE807-TL-E

Onsemi

SBE807-TL-E by Onsemi

The Onsemi SBE807-TL-E is a Schottky rectifier diode with a max reverse recovery time of 0.01 us and a max forward voltage of 0.5 V. It operates b/w -55 to 125 °C and has a peak repetitive peak reverse voltage of 30 V, making it ideal for high-speed switching applications in electronics.

Median Price

$0.208

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 122,133 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.190

122,133

-

-

-

$0.190

Rochester

USA . 118,913 parts In-Stock

1+ parts

-

100+ parts

$0.225

1k+ parts

$0.186

10k+ parts

$0.166

118,913

-

$0.225

$0.186

$0.166

Verical

USA . 117,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.208

117,000

-

-

-

$0.208

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,713 parts In-Stock

1+ parts

$0.175

100+ parts

-

1k+ parts

-

10k+ parts

-

1,713

$0.175

-

-

-

Vyrian

USA . 1,421 parts In-Stock

1+ parts

$0.184

100+ parts

-

1k+ parts

-

10k+ parts

-

1,421

$0.184

-

-

-

DigiKey Marketplace

USA . 122,133 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

122,133

-

-

-

-

Chip Stock

USA . 7,760 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,760

-

-

-

-

Speed Components Ltd

Israel . 2,444 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,444

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 121,326 parts In-Stock

1+ parts

$0.156

100+ parts

-

1k+ parts

-

10k+ parts

-

121,326

$0.156

-

-

-

Corphita

USA . 1,264 parts In-Stock

1+ parts

$0.166

100+ parts

-

1k+ parts

-

10k+ parts

-

1,264

$0.166

-

-

-

Corohmni

South Africa . 326 parts In-Stock

1+ parts

$0.184

100+ parts

-

1k+ parts

-

10k+ parts

-

326

$0.184

-

-

-

Component Stockers USA

USA . 122 parts In-Stock

1+ parts

$0.190

100+ parts

$0.170

1k+ parts

$0.160

10k+ parts

$0.160

122

$0.190

$0.170

$0.160

$0.160

QUARKTWIN TECHNOLOGY LTD

USA . 22,933 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

22,933

-

-

-

-

Problanco Electronics

Mexico . 7,489 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,489

-

-

-

-

SupplyDigital Components

Austria . 4,998 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,998

-

-

-

-

TANS Electronics

Latvia . 3,387 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,387

-

-

-

-

Metaverse IC Inc.

Canada . 3,249 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,249

-

-

-

-

Perfect Parts

USA . 3,154 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,154

-

-

-

-

Kepictronics

USA . 2,991 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,991

-

-

-

-

Authorized Procurement Solutions

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,500

-

-

-

-

UHIMA Technologies

Türkiye . 249 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

249

-

-

-

-

Continental Prestige Electronics

USA . 100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.178

10k+ parts

-

100

-

-

$0.178

-

Kulean Microsystems

USA . 84 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

84

-

-

-

-

Overview

Discover the SBE807-TL-E by Onsemi, a high-quality SCHOTTKY rectifier diode that offers superior performance and reliability. With surface mount capability and a fast reverse recovery time of 0.01 us, this diode is perfect for a wide range of applications. From power supplies to battery chargers, the SBE807-TL-E provides efficient energy conversion and reliable protection. Trust in Onsemi's reputation for excellence in semiconductor manufacturing and experience the value and benefits that this diode brings to your projects.

Feature Benefit Bullets

Surface Mount: YES

Surface mount design allows for easy and compact integration onto circuit boards, making installation convenient and saving space.

Maximum Reverse Recovery Time: 0.01 us

The low reverse recovery time ensures fast switching speeds, making this diode suitable for high-frequency applications.

Maximum Reverse Current: 15 uA

Low reverse current reduces power losses and improves efficiency of the circuit.

Reverse Test Voltage: 16 V

With a reverse test voltage of 16V, this diode can handle moderate reverse voltages effectively.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature allows for reliable performance in a wide range of environments.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature ensures the diode can function in cold conditions without any issues.

Terminal Finish: TIN BISMUTH

The tin bismuth terminal finish provides good solderability and ensures a reliable electrical connection.

Peak Reflow Temperature °C: 260

The high peak reflow temperature enables the diode to withstand the soldering process during manufacturing without damage.

Diode Type: RECTIFIER DIODE

Rectifier diodes are specifically designed for converting alternating current (AC) to direct current (DC), making them essential components in many electronics.

Maximum Forward Voltage (VF): 0.5 V

The low forward voltage drop results in minimal power loss across the diode when conducting, improving overall efficiency.

Technology: SCHOTTKY

Schottky diodes have a lower forward voltage drop compared to standard silicon diodes, making them ideal for high-speed switching applications.

Maximum Repetitive Peak Reverse Voltage: 30 V

The diode can withstand repetitive peak reverse voltages of up to 30V, making it suitable for various circuit designs.

Diode Element Material: SILICON

Silicon diodes are widely used due to their reliability, high efficiency, and cost-effectiveness in a wide range of applications.

Technical Specifications

Diodes & Rectifiers SBE807-TL-E attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.5 V

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Current:

15 uA

Maximum Reverse Recovery Time:

.01 us

Reverse Test Voltage:

16 V

Sub-Category:

Other Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

TIN BISMUTH

Trade Compliance

SBE807-TL-E Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 11