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SBE805-TL-E

Onsemi

SBE805-TL-E by Onsemi

The Onsemi SBE805-TL-E is a Schottky rectifier diode with a max reverse recovery time of 0.01 us, forward voltage of 0.55 V, and repetitive peak reverse voltage of 30 V. Ideal for applications requiring fast switching speeds and low power loss in temperature range from -55 to 125 °C.

Median Price

$0.251

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 193,599 parts In-Stock

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-

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$0.251

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$0.208

10k+ parts

$0.186

193,599

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$0.251

$0.208

$0.186

DigiKey

USA . 193,599 parts In-Stock

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$0.310

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193,599

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$0.310

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Verical

USA . 172,599 parts In-Stock

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$0.232

172,599

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$0.232

Distributors (In-Stock)

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Digiode

USA . 532 parts In-Stock

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$0.196

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532

$0.196

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Vyrian

USA . 1,460 parts In-Stock

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$0.206

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1,460

$0.206

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Component Electronics Inc.

Canada . 54,000 parts In-Stock

1+ parts

$0.380

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$0.290

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$0.250

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54,000

$0.380

$0.290

$0.250

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DigiKey Marketplace

USA . 193,599 parts In-Stock

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193,599

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Distributors (Availability)

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Corphita

USA . 1,397 parts In-Stock

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$0.185

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$0.185

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Corohmni

South Africa . 167 parts In-Stock

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$0.206

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167

$0.206

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Perfect Parts

USA . 25,277 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 16,948 parts In-Stock

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TANS Electronics

Latvia . 7,634 parts In-Stock

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Kepictronics

USA . 6,829 parts In-Stock

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Authorized Procurement Solutions

USA . 5,500 parts In-Stock

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Problanco Electronics

Mexico . 5,304 parts In-Stock

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Kulean Microsystems

USA . 4,437 parts In-Stock

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Metaverse IC Inc.

Canada . 3,000 parts In-Stock

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SupplyDigital Components

Austria . 2,413 parts In-Stock

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UHIMA Technologies

Türkiye . 290 parts In-Stock

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Overview

Discover the superior quality and reliability of the SBE805-TL-E by Onsemi, a leading manufacturer in the industry of Diodes & Rectifiers. With its surface mount capability and cutting-edge SCHOTTKY technology, this rectifier diode offers unparalleled performance in various applications. From power supplies to automotive electronics, this product guarantees efficient operation with a maximum forward voltage of only 0.55V. Trust Onsemi to deliver exceptional products that provide value, benefits, and advantages to customers seeking high-quality components for their projects.

Feature Benefit Bullets

Surface Mount: YES

Allows for easy and efficient mounting on circuit boards, saving space and simplifying assembly processes.

Maximum Reverse Recovery Time: 0.01 us

Fast reverse recovery time ensures quick switching speed and lower power losses, making it suitable for high-frequency applications.

Maximum Reverse Current: 30 uA

Low reverse current minimizes power dissipation and improves efficiency of the circuit.

Reverse Test Voltage: 15 V

The reverse test voltage of 15V provides a safety margin, protecting the diode from excessive voltage.

Maximum Operating Temperature: 125 °C

Wide operating temperature range allows for use in various environmental conditions without performance degradation.

Minimum Operating Temperature: -55 °C

The diode can operate in extremely low temperatures, making it suitable for automotive and industrial applications.

Terminal Finish: Tin/Bismuth (Sn/Bi)

Tin/Bismuth terminal finish provides good solderability and reliability in harsh operating conditions.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it is designed for converting AC to DC power with low forward voltage drop and high efficiency.

Maximum Forward Voltage (VF): 0.55 V

Low forward voltage drop reduces power loss and heat dissipation, improving overall efficiency of the circuit.

Technology: SCHOTTKY

Schottky diodes have fast switching speed and low forward voltage drop, making them ideal for high-frequency and high-efficiency applications.

Maximum Repetitive Peak Reverse Voltage: 30 V

With a high reverse voltage rating, the diode can handle repetitive surges and transient overvoltages effectively.

Diode Element Material: SILICON

Silicon diodes offer good performance and reliability, making them suitable for a wide range of applications.

Technical Specifications

Diodes & Rectifiers SBE805-TL-E attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.55 V

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Current:

30 uA

Maximum Reverse Recovery Time:

.01 us

Reverse Test Voltage:

15 V

Sub-Category:

Other Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Tin/Bismuth (Sn/Bi)

Trade Compliance

SBE805-TL-E Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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