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SBE812-TL-E

Onsemi

SBE812-TL-E by Onsemi

SBE812-TL-E by Onsemi is a Schottky rectifier diode with 2 elements, featuring a max forward voltage of 0.6V and output current of 1A. With a reverse test voltage of 30V and fast reverse recovery time of 0.01us, it is ideal for applications requiring high-speed switching in electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,245 parts In-Stock

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Digiode

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QUARKTWIN TECHNOLOGY LTD

USA . 14,997 parts In-Stock

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SupplyDigital Components

Austria . 5,622 parts In-Stock

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Kulean Microsystems

USA . 3,953 parts In-Stock

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Problanco Electronics

Mexico . 2,931 parts In-Stock

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Perfect Parts

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TANS Electronics

Latvia . 2,169 parts In-Stock

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Corphita

USA . 1,276 parts In-Stock

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Corohmni

South Africa . 213 parts In-Stock

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UHIMA Technologies

Türkiye . 87 parts In-Stock

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Overview

Unlock the power of precision with the SBE812-TL-E by Onsemi. Crafted with superior quality and expertise, this Schottky rectifier diode offers unparalleled performance in a compact, easy-to-install package. Whether you're designing consumer electronics, automotive systems, or industrial equipment, this diode's fast reverse recovery time, low forward voltage, and high output current make it the ideal choice for your next project. Trust Onsemi to deliver reliability and efficiency, ensuring your applications run smoothly and efficiently. Experience the difference with the SBE812-TL-E today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the package body provides durability and protection for the diodes and rectifiers, making them suitable for various industrial and commercial applications.

Surface Mount: YES

Surface mount capability allows for easy and convenient installation onto circuit boards, saving space and allowing for efficient assembly processes.

Maximum Reverse Recovery Time: 0.01 us

The fast reverse recovery time of 0.01 us ensures efficient and quick switching performance of the diodes, enhancing overall circuit efficiency.

Maximum Reverse Current: 30 uA

The low maximum reverse current of 30 uA indicates minimal leakage current, leading to improved energy efficiency and reduced power loss in the circuit.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature of 125 °C allows for reliable operation in a wide range of environmental conditions, making these diodes suitable for demanding applications.

Diode Type: RECTIFIER DIODE

Being rectifier diodes, these components are specifically designed for converting AC to DC current, making them essential for power supply applications and rectification circuits.

Technology: SCHOTTKY

The Schottky technology used in these diodes offers low forward voltage drop and fast switching characteristics, making them ideal for high-frequency and high-speed applications.

Technical Specifications

Diodes & Rectifiers SBE812-TL-E attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Config:

SEPARATE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.6 V

JESD-30 Code:

R-PDSO-F8

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Repetitive Peak Reverse Voltage:

60 V

Maximum Reverse Current:

30 uA

Maximum Reverse Recovery Time:

.01 us

Reverse Test Voltage:

30 V

Sub-Category:

Other Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Tin/Bismuth (Sn/Bi)

Terminal Form:

Terminal Position:

Trade Compliance

SBE812-TL-E Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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