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SBE807-TL-W

Onsemi

SBE807-TL-W by Onsemi

SBE807-TL-W by Onsemi is a Schottky rectifier diode with Tin/Bismuth terminal finish. It can withstand peak reflow temperature of 260 °C for up to 30s. Ideal for applications requiring high-speed switching and low forward voltage drop in electronic circuits.

Median Price

$0.414

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 2,401 parts In-Stock

1+ parts

$0.570

100+ parts

$0.284

1k+ parts

$0.193

10k+ parts

$0.168

2,401

$0.570

$0.284

$0.193

$0.168

DigiKey

USA . 53 parts In-Stock

1+ parts

$0.770

100+ parts

-

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53

$0.770

-

-

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Verical

USA . 12,000 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

$0.259

12,000

-

-

-

$0.259

Chip1Stop

Japan . 12,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.159

12,000

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-

-

$0.159

EBV Elektronik

Germany . 3,000 parts In-Stock

1+ parts

-

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3,000

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-

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-

Distributors (In-Stock)

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Vyrian

USA . 185 parts In-Stock

1+ parts

$0.159

100+ parts

-

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185

$0.159

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Digiode

USA . 659 parts In-Stock

1+ parts

$0.542

100+ parts

-

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659

$0.542

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Flip Electronics

USA . 6,000 parts In-Stock

1+ parts

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6,000

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-

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NAC Semi

USA . 3,000 parts In-Stock

1+ parts

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$0.236

3,000

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-

-

$0.236

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 271 parts In-Stock

1+ parts

$0.159

100+ parts

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271

$0.159

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Corphita

USA . 1,892 parts In-Stock

1+ parts

$0.513

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1,892

$0.513

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Kepictronics

USA . 650,000 parts In-Stock

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650,000

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Infinite Electronics LLP (Excess)

. 36,001 parts In-Stock

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36,001

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Problanco Electronics

Mexico . 7,744 parts In-Stock

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7,744

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Perfect Parts

USA . 7,605 parts In-Stock

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7,605

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SupplyDigital Components

Austria . 4,371 parts In-Stock

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4,371

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Kulean Microsystems

USA . 3,327 parts In-Stock

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3,327

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TANS Electronics

Latvia . 3,233 parts In-Stock

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Eastek

USA . 3,000 parts In-Stock

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3,000

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Continental Prestige Electronics

USA . 1,900 parts In-Stock

1+ parts

-

100+ parts

$0.270

1k+ parts

$0.164

10k+ parts

$0.127

1,900

-

$0.270

$0.164

$0.127

Speed Components Ltd (Excess)

Israel . 100 parts In-Stock

1+ parts

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100

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UHIMA Technologies

Türkiye . 55 parts In-Stock

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55

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Overview

Unleash the power of innovation with the SBE807-TL-W by Onsemi. Designed with precision and quality in mind, this SCHOTTKY RECTIFIER DIODE offers unparalleled performance and reliability. Whether you are looking to enhance your electronic projects or streamline your manufacturing processes, this diode is the perfect solution. Trust in the expertise of Onsemi, a leading manufacturer in the industry, to deliver cutting-edge technology that meets your needs. Upgrade your applications today and experience the value and benefits that the SBE807-TL-W has to offer.

Feature Benefit Bullets

Terminal Finish: Tin/Bismuth (Sn/Bi)

Tin/Bismuth terminal finish provides excellent solderability and resistance to corrosion, ensuring a reliable connection in various applications.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum reflow time of 30 seconds, this diode ensures quick and efficient soldering, saving time during the assembly process.

Peak Reflow Temperature °C: 260

Capable of withstanding reflow temperatures up to 260 °C, this diode is suitable for high-temperature soldering processes, providing durability and reliability.

Diode Type: RECTIFIER DIODE

Rectifier diodes are ideal for converting alternating current (AC) to direct current (DC), making this product versatile and suitable for a wide range of electrical applications.

Technology: SCHOTTKY

Schottky diodes have lower forward voltage drop and faster switching speeds compared to standard silicon diodes, resulting in improved efficiency and reduced power loss in circuits.

Diode Element Material: SILICON

Silicon diodes offer stable and consistent performance over a wide temperature range, making this product reliable in various operating conditions.

Technical Specifications

Diodes & Rectifiers SBE807-TL-W attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Diode Element Material:

SILICON

Diode Type:

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

Peak Reflow Temperature (C):

260

Technology:

SCHOTTKY

Terminal Finish:

Tin/Bismuth (Sn/Bi)

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SBE807-TL-W Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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