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SBE813-TL-E

Onsemi

SBE813-TL-E by Onsemi

SBE813-TL-E by Onsemi is a Schottky rectifier diode with 2 elements, offering a max output current of 3A and forward voltage of 0.52V. With a reverse test voltage of 15V and fast recovery time of 0.02us, it is ideal for applications requiring high efficiency power conversion in compact electronic devices.

Median Price

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Lifecycle Status

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2

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1k+

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Digiode

USA . 848 parts In-Stock

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Vyrian

USA . 689 parts In-Stock

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Advanced Electronics

New Zealand . 5,000 parts In-Stock

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$0.156

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$0.142

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$0.128

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TANS Electronics

Latvia . 6,262 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 3,438 parts In-Stock

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Perfect Parts

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Corphita

USA . 1,728 parts In-Stock

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SupplyDigital Components

Austria . 1,678 parts In-Stock

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Problanco Electronics

Mexico . 847 parts In-Stock

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UHIMA Technologies

Türkiye . 621 parts In-Stock

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Kulean Microsystems

USA . 276 parts In-Stock

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Corohmni

South Africa . 125 parts In-Stock

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Overview

Experience superior quality and performance with the SBE813-TL-E by Onsemi. As a leading manufacturer in the industry of Diodes & Rectifiers, Onsemi delivers cutting-edge technology and reliability in every product. This versatile diode offers a wide range of applications, providing customers with exceptional value and benefits. Trust in the advantages of Onsemi's expertise and innovation to enhance your projects and ensure optimal performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides good durability and protection for the diodes, making them suitable for various environments.

Config: SEPARATE, 2 ELEMENTS

Having separate 2 elements allows for more flexibility in circuit design and can help optimize performance in specific applications.

Surface Mount: YES

Being surface mountable makes installation easier and more efficient, especially in automated manufacturing processes.

Maximum Reverse Recovery Time: 0.02 us

The fast reverse recovery time of 0.02 us ensures efficient switching and can contribute to improved overall circuit performance.

Maximum Reverse Current: 42 uA

The low maximum reverse current of 42 uA indicates minimal leakage, which is important for ensuring proper functionality and efficiency.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy placement on circuit boards and efficient use of space.

Reverse Test Voltage: 15 V

The reverse test voltage of 15V meets common industry standards and ensures the diodes can withstand typical operating conditions.

No. of Terminals: 8

Having 8 terminals provides ample connectivity options for different types of circuits and devices.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the circuit board and can be advantageous in compact electronic designs.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125 °C, these diodes can reliably operate in a wide range of temperature environments.

Minimum Operating Temperature: -55 °C

The ability to operate at temperatures as low as -55 °C makes these diodes suitable for use in cold environments or industrial applications.

Terminal Finish: TIN BISMUTH

The tin bismuth terminal finish offers good conductivity and solderability, ensuring reliable connections in the circuit.

Terminal Position: DUAL

The dual terminal position provides flexibility in circuit design and allows for easier connection to other components.

Diode Type: RECTIFIER DIODE

Being a rectifier diode, this product is designed for converting AC to DC current flow efficiently and reliably.

Maximum Forward Voltage (VF): 0.52 V

The low maximum forward voltage of 0.52V minimizes power loss and heat generation, making the diodes energy efficient.

Maximum Output Current: 3 A

With a maximum output current of 3A, these diodes can handle high current loads and are suitable for various power applications.

Technology: SCHOTTKY

Schottky diodes offer fast switching speeds and low forward voltage drop, making them ideal for high-frequency applications and power efficiency.

Terminal Form: FLAT

The flat terminal form facilitates easy soldering and ensures secure connections in the circuit.

No. of Elements: 2

Having 2 elements allows for more functionality and versatility in circuit design, offering potential benefits in performance and efficiency.

Maximum Repetitive Peak Reverse Voltage: 30 V

The maximum repetitive peak reverse voltage of 30V ensures protection against voltage spikes and transients, enhancing the reliability of the diodes.

Maximum Non Repetitive Peak Forward Current: 20 A

The high maximum non repetitive peak forward current of 20A enables the diodes to handle short-term overloads without damage, increasing their reliability in harsh conditions.

Diode Element Material: SILICON

Silicon is a common and reliable material for diode elements, providing stable performance and durability in various operating conditions.

Technical Specifications

Diodes & Rectifiers SBE813-TL-E attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY, LOW LEAKAGE CURRENT

Application:

GENERAL PURPOSE

Config:

SEPARATE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.52 V

JESD-30 Code:

R-PDSO-F8

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

20 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Current:

42 uA

Maximum Reverse Recovery Time:

.02 us

Reverse Test Voltage:

15 V

Sub-Category:

Other Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

TIN BISMUTH

Terminal Form:

Terminal Position:

Trade Compliance

SBE813-TL-E Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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