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PZTA96ST3

Onsemi

PZTA96ST3 by Onsemi

PZTA96ST3 by Onsemi is a PNP BJT with 450V VCEO, 0.5A IC, and 1.5W power dissipation. Ideal for applications requiring small outline packages like power supplies and motor controls.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,904 parts In-Stock

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Digiode

USA . 1,064 parts In-Stock

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Kulean Microsystems

USA . 8,301 parts In-Stock

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SupplyDigital Components

Austria . 7,293 parts In-Stock

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Problanco Electronics

Mexico . 4,702 parts In-Stock

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Corphita

USA . 2,463 parts In-Stock

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TANS Electronics

Latvia . 1,571 parts In-Stock

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Corohmni

South Africa . 290 parts In-Stock

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UHIMA Technologies

Türkiye . 174 parts In-Stock

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Overview

Discover the power of the PZTA96ST3 by Onsemi, a top-of-the-line Power Bipolar Junction Transistor that delivers unmatched performance and reliability. Manufactured by industry leader Onsemi, this PNP transistor offers a single configuration with a maximum operating temperature of 150 °C, making it ideal for a wide range of applications. With a maximum collector-emitter voltage of 450V and a maximum collector current of 0.5A, this transistor is perfect for high-power electronic projects. Trust in Onsemi for quality products that provide exceptional value and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body provides durability and protection to the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

The PNP polarity allows for easy integration into circuits where PNP transistors are required, providing versatility in design.

Configuration: SINGLE

The single configuration simplifies circuit design and reduces complexity, making it easier to implement this transistor into projects.

Surface Mount: YES

Being surface mountable enables easy and efficient PCB assembly, saving time and effort during manufacturing processes.

Maximum Power Dissipation (Abs): 1.5 W

With a high maximum power dissipation, this transistor can handle relatively high power levels, making it suitable for applications that require power amplification.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature ensures reliability and stability under varying temperature conditions, making it suitable for a wide range of environments.

Maximum Collector-Emitter Voltage: 450 V

The high maximum collector-emitter voltage allows for use in applications that require high voltage handling capabilities.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, making this product a dependable choice for various electronic circuits.

Maximum Collector Current (IC): 0.5 A

With a maximum collector current of 0.5 A, this transistor can handle moderate current levels, suitable for low to medium power applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) PZTA96ST3 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

450 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-261AA

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Trade Compliance

PZTA96ST3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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