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PZTA44,115

NXP Semiconductors

PZTA44,115 by NXP Semiconductors

NXP Semiconductors' PZTA44,115 is a NPN BJT transistor with 400V VCEO and 0.3A IC. It has a 0.75V VCEsat and 20MHz fT, ideal for amplifier applications. The transistor comes in a small outline package with GULL WING terminals, suitable for surface mount assembly.

Median Price

$0.102

Lifecycle Status

Suppliers In-Stock

22

In-Stock Inventory

1k+

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Farnell

UK . 178 parts In-Stock

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$0.377

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$0.222

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$0.132

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178

$0.377

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Element14

Singapore . 999 parts In-Stock

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$0.437

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$0.202

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$0.194

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$0.437

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Rochester

USA . 86,000 parts In-Stock

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$0.102

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$0.085

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$0.076

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$0.102

$0.085

$0.076

Verical

USA . 47,000 parts In-Stock

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$0.095

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$0.095

TTI

USA . 9,000 parts In-Stock

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$0.084

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$0.078

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$0.084

$0.078

Chip1Stop

Japan . 2,639 parts In-Stock

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$0.262

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$0.262

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Arrow

USA . 2,416 parts In-Stock

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$0.090

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2,416

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Distributors (In-Stock)

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Digiode

USA . 1,471 parts In-Stock

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$0.080

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Nova Conductors

Japan . 870 parts In-Stock

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$0.187

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$0.187

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NAC Semi

USA . 190,000 parts In-Stock

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Chip Stock

USA . 57,000 parts In-Stock

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IBS Electronics

USA . 47,000 parts In-Stock

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$0.094

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$0.089

47,000

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$0.089

ComSIT Distribution GmbH

Germany . 18,750 parts In-Stock

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ComSIT USA

USA . 18,750 parts In-Stock

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Sensible Micro Corp

USA . 8,000 parts In-Stock

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Vyrian

USA . 6,813 parts In-Stock

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Bristol Electronics

USA . 2,051 parts In-Stock

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Connect4Technologies Inc.

Canada . 1,950 parts In-Stock

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Anansix

USA . 836 parts In-Stock

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836

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LIBRA Elektronik GmbH

Germany . 714 parts In-Stock

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714

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Martec Srl

Italy . 300 parts In-Stock

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Prism Electronics

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Distributors (Availability)

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Semicontronic

India . 141,832 parts In-Stock

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$0.065

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$0.063

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$0.063

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$0.063

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Ampacity Inc.

Singapore . 26,322 parts In-Stock

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Corphita

USA . 1,560 parts In-Stock

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AZTECH Wire

Italy . 6,840 parts In-Stock

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Argo Parts USA

USA . 4,677 parts In-Stock

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$0.187

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$0.181

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Netroflash

USA . 100 parts In-Stock

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Benley Electronics

USA . 110 parts In-Stock

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Perfect Parts

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GreenTree Electronics

Israel . 62,000 parts In-Stock

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Glotronic Ltd.

UK . 15,200 parts In-Stock

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Authorized Procurement Solutions

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UNI Independent Distributors

Spain . 7,885 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,257 parts In-Stock

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Eastek

USA . 4,000 parts In-Stock

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Continental Prestige Electronics

USA . 3,000 parts In-Stock

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$0.151

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Supply Digital

USA . 1,106 parts In-Stock

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Overview

Enhance your electronic devices with the PZTA44,115 from NXP Semiconductors. As a leader in semiconductor technology, NXP guarantees top-quality products that deliver exceptional performance. This Power Bipolar Junction Transistor is ideal for amplifier applications, providing reliable power and efficiency. With a maximum VCEsat of 0.75V and a maximum collector-emitter voltage of 400V, this NPN transistor ensures optimal functionality. Trust NXP to provide you with superior components that elevate your projects to the next level of excellence. Upgrade your designs today with the PZTA44,115.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package is lightweight and durable, making the transistor easy to handle and resistant to damage during transportation and installation.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

The single configuration simplifies circuit design and makes the transistor easier to integrate into a system.

Maximum VCEsat: 0.75 V

The low VCEsat value indicates minimal saturation voltage, leading to efficient operation and reduced power losses.

Surface Mount: YES

Being surface mountable allows for easy and automated assembly onto printed circuit boards, saving time and cost in manufacturing processes.

Maximum Power Dissipation (Abs): 1.5 W

With a high maximum power dissipation, this transistor can handle relatively high power levels without overheating or failing.

Minimum DC Current Gain (hFE): 50

The high DC current gain ensures that small input currents can control larger output currents effectively, enhancing the transistor's performance in amplifier circuits.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows the transistor to function reliably in a variety of environmental conditions without degradation.

Maximum Collector-Base Capacitance: 7 pF

The low collector-base capacitance minimizes signal distortion and ensures high-frequency performance in amplifier applications.

Maximum Collector-Emitter Voltage: 400 V

The high collector-emitter voltage rating provides a wide safety margin for voltage spikes and surges, increasing the reliability and durability of the transistor.

Maximum Collector Current (IC): 0.3 A

The moderate collector current rating allows the transistor to handle typical amplifier current levels with ease while remaining within its safe operating limits.

Nominal Transition Frequency (fT): 20 MHz

The high nominal transition frequency enables the transistor to operate at high frequencies, making it suitable for high-speed amplifier applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) PZTA44,115 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

7 pF

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

50

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.75 V

Trade Compliance

PZTA44,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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