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NZT44H8

Onsemi

NZT44H8 by Onsemi

NZT44H8 by Onsemi is a NPN BJT transistor with 60V VCEO, 8A IC, and 50MHz fT. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals for surface mounting. With a max power dissipation of 1.5W and operating temp up to 150 °C, it's suitable for various electronic designs.

Median Price

$1.570

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 615 parts In-Stock

1+ parts

$1.570

100+ parts

$0.665

1k+ parts

$0.522

10k+ parts

$0.377

615

$1.570

$0.665

$0.522

$0.377

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,615 parts In-Stock

1+ parts

$1.188

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2,615

$1.188

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Vyrian

USA . 1,492 parts In-Stock

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$1.250

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1,492

$1.250

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Flip Electronics

USA . 28,000 parts In-Stock

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28,000

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Anansix

USA . 2,553 parts In-Stock

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2,553

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Cyclops Electronics Ltd

UK . 2,172 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 1,303 parts In-Stock

1+ parts

$1.125

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1,303

$1.125

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Corohmni

South Africa . 312 parts In-Stock

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$1.250

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312

$1.250

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Advanced Electronics

New Zealand . 550 parts In-Stock

1+ parts

$2.104

100+ parts

$1.915

1k+ parts

$1.725

10k+ parts

-

550

$2.104

$1.915

$1.725

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Andel Nordic

Denmark . 145 parts In-Stock

1+ parts

$10.141

100+ parts

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$9.735

10k+ parts

$9.735

145

$10.141

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$9.735

$9.735

Kepictronics

USA . 27,860 parts In-Stock

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Perfect Parts

USA . 12,253 parts In-Stock

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TANS Electronics

Latvia . 7,136 parts In-Stock

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

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7,000

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SupplyDigital Components

Austria . 5,930 parts In-Stock

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Kulean Microsystems

USA . 4,093 parts In-Stock

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Supply Digital

USA . 2,086 parts In-Stock

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2,086

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Problanco Electronics

Mexico . 1,909 parts In-Stock

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1,909

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UHIMA Technologies

Türkiye . 748 parts In-Stock

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748

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Overview

Unleash the power of innovation with the NZT44H8 by Onsemi. As a leading manufacturer in the industry, Onsemi guarantees top-notch quality and reliability. The NZT44H8 falls under the category of Power Bipolar Junction Transistors (BJT) and is perfect for switching applications. With its NPN polarity and single configuration, this transistor offers exceptional performance and efficiency. Its compact design and surface mount feature make it versatile for various electronic projects. Experience seamless operation and optimal functionality with the NZT44H8, providing customers with unmatched value and benefits.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the transistor, ensuring long-term reliability.

Polarity or Channel Type: NPN

Suitable for various electronic applications due to its NPN configuration.

Configuration: SINGLE

Simplifies circuit design and integration as a single transistor is used for switching purposes.

Maximum Power Dissipation (Abs): 1.5 W

Withstands higher power dissipation levels, making it suitable for applications requiring efficient switching.

Maximum Operating Temperature: 150 °C

Can withstand high operating temperatures, ensuring reliability in diverse environments.

Nominal Transition Frequency (fT): 50 MHz

High transition frequency enables fast switching speeds, ideal for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) NZT44H8 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NZT44H8 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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