Loading...

NVT210CMT3R2G

Onsemi

NVT210CMT3R2G by Onsemi

NVT210CMT3R2G by Onsemi is a Power Management IC with 8 terminals, operating at -40 to 125 °C. It supports a nominal voltage of 3.3 V and has a small outline package style. Ideal for automotive applications requiring power supply support circuits in compact spaces.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,431 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,431

-

-

-

-

Vyrian

USA . 1,814 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,814

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Problanco Electronics

Mexico . 5,156 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,156

-

-

-

-

Kulean Microsystems

USA . 2,830 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,830

-

-

-

-

SupplyDigital Components

Austria . 2,310 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,310

-

-

-

-

TANS Electronics

Latvia . 1,464 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,464

-

-

-

-

Corphita

USA . 1,008 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,008

-

-

-

-

UHIMA Technologies

Türkiye . 396 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

396

-

-

-

-

Corohmni

South Africa . 54 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

54

-

-

-

-

Overview

Enhance your power management solutions with the NVT210CMT3R2G by Onsemi. Crafted with precision using high-quality materials, this compact and versatile IC offers reliable performance in a wide range of applications. From automotive to industrial settings, this product provides seamless power supply support for your projects. Trust in Onsemi's expertise and choose the NVT210CMT3R2G for unparalleled value and efficiency. Elevate your designs with this innovative solution today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material is commonly used for its durability and resistance to heat and chemicals, making it a reliable choice for power management ICs.

Surface Mount: YES

Surface mount technology allows for easy and efficient installation on PCBs, saving space and enabling automated assembly processes.

Nominal Supply Voltage (Vsup): 3.3 V

A 3.3V supply voltage is a commonly used standard in many electronic devices, ensuring compatibility with a wide range of applications.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125 °C, this power management IC can withstand high temperature environments without degradation in performance.

Minimum Operating Temperature: -40 °C

The ability to operate at temperatures as low as -40 °C makes this IC suitable for use in a variety of environments, including automotive and industrial applications.

Minimum Supply Voltage (Vsup): 2.8 V

The 2.8V minimum supply voltage ensures reliable operation even in low power scenarios, providing stability and efficiency in different power supply conditions.

Temperature Grade: AUTOMOTIVE

Being automotive grade means that this power management IC meets the rigorous quality and performance standards required for use in automotive applications, ensuring reliability and safety.

No. of Channels: 2

Having 2 channels allows the IC to manage multiple power inputs or outputs simultaneously, increasing flexibility and enabling more complex power distribution setups.

Technical Specifications

Power Management ICs NVT210CMT3R2G attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Adjustable Threshold:

NO

JESD-30 Code:

S-PDSO-N8

Length:

2 mm

No. of Channels:

2

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Seated Height:

.8 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.8 V

Nominal Supply Voltage (Vsup):

3.3 V

Surface Mount:

YES

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width (mm):

2 mm

Trade Compliance

NVT210CMT3R2G Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 5