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NVT210DMTR2G

Onsemi

NVT210DMTR2G by Onsemi

NVT210DMTR2G by Onsemi is a Power Management IC with 3.3V nominal voltage, suitable for automotive applications. It features small outline package style, dual terminal position, and operates b/w -40 to 125 °C temperature range. Ideal for power supply support circuits in compact designs.

Median Price

$6.487

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 251,938 parts In-Stock

1+ parts

-

100+ parts

$5.190

1k+ parts

$4.640

10k+ parts

$4.370

251,938

-

$5.190

$4.640

$4.370

DigiKey

USA . 251,938 parts In-Stock

1+ parts

-

100+ parts

$6.830

1k+ parts

-

10k+ parts

-

251,938

-

$6.830

-

-

Verical

USA . 251,938 parts In-Stock

1+ parts

-

100+ parts

$6.487

1k+ parts

$5.800

10k+ parts

$5.463

251,938

-

$6.487

$5.800

$5.463

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,048 parts In-Stock

1+ parts

$4.660

100+ parts

-

1k+ parts

-

10k+ parts

-

2,048

$4.660

-

-

-

Digiode

USA . 323 parts In-Stock

1+ parts

$5.491

100+ parts

-

1k+ parts

-

10k+ parts

-

323

$5.491

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 251,648 parts In-Stock

1+ parts

$3.960

100+ parts

-

1k+ parts

-

10k+ parts

-

251,648

$3.960

-

-

-

Corohmni

South Africa . 158 parts In-Stock

1+ parts

$4.660

100+ parts

-

1k+ parts

-

10k+ parts

-

158

$4.660

-

-

-

Corphita

USA . 1,132 parts In-Stock

1+ parts

$5.202

100+ parts

-

1k+ parts

-

10k+ parts

-

1,132

$5.202

-

-

-

Continental Prestige Electronics

USA . 252,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$4.660

10k+ parts

-

252,000

-

-

$4.660

-

TANS Electronics

Latvia . 5,728 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,728

-

-

-

-

SupplyDigital Components

Austria . 4,783 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,783

-

-

-

-

Kulean Microsystems

USA . 2,498 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,498

-

-

-

-

UHIMA Technologies

Türkiye . 921 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

921

-

-

-

-

Problanco Electronics

Mexico . 718 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

718

-

-

-

-

Overview

Elevate your power management solutions with the NVT210DMTR2G by Onsemi. Designed with top-notch quality and precision, this Power Management IC offers unmatched reliability and performance in various applications. From automotive to industrial settings, this small outline, very thin profile IC provides exceptional value and benefits, ensuring optimal power supply support for your projects. Trust in Onsemi's reputation for excellence and innovation, and experience the advantages that the NVT210DMTR2G brings to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the IC, allowing it to function effectively in various environments.

Surface Mount: YES

Allows for easy and efficient PCB assembly, saving time and effort during production.

Package Shape: SQUARE

Provides a compact and space-saving design, ideal for applications with limited space.

Nominal Supply Voltage (Vsup): 3.3 V

Offers a stable power supply voltage for the IC to operate within its specified parameters.

No. of Terminals: 8

Provides multiple connection points for interfacing with other components, increasing flexibility in circuit design.

Package Style (Meter): SMALL OUTLINE, VERY THIN PROFILE

Enhances the overall compactness of the IC, making it suitable for applications where space constraints are a concern.

Maximum Operating Temperature: 125 °C

Allows the IC to operate reliably even in high-temperature environments, ensuring consistent performance.

Minimum Operating Temperature: -40 °C

Ensures the IC can function in low-temperature conditions without any issues, making it versatile for various applications.

Terminal Finish: NICKEL GOLD PALLADIUM

Provides excellent corrosion resistance and conductivity, ensuring reliable connections over an extended period.

Terminal Position: DUAL

Offers increased flexibility in PCB layout and allows for more efficient routing of connections.

Maximum Seated Height: 0.8 mm

Keeps the overall height of the IC minimal, helping to reduce the overall size of the PCB and meet space requirements.

Width (mm): 2 mm

Compact width allows for efficient use of space on the PCB, especially in applications with limited board real estate.

Other IC type: POWER SUPPLY SUPPORT CIRCUIT

Specifically designed to support power management functions, ensuring reliable and efficient operation of power supply systems.

Minimum Supply Voltage (Vsup): 2.8 V

Provides a wide operating voltage range, allowing flexibility in power supply configurations.

Length: 2 mm

Compact length facilitates easy integration of the IC into tight spaces, contributing to space-saving designs.

Temperature Grade: AUTOMOTIVE

Designed to meet stringent automotive standards for temperature and reliability, making it suitable for automotive applications.

No. of Channels: 2

Provides support for multiple power channels, enabling efficient power management and distribution.

Terminal Form: NO LEAD

Lead-free terminals comply with environmental regulations and offer improved solder joint reliability.

Terminal Pitch: 0.5 mm

Narrow terminal pitch allows for high-density mounting and compact PCB designs, ideal for space-constrained applications.

Maximum Supply Voltage (Vsup): 3.6 V

Wide supply voltage range ensures compatibility with a variety of power sources and applications.

Technical Specifications

Power Management ICs NVT210DMTR2G attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Adjustable Threshold:

NO

JESD-30 Code:

S-PDSO-N8

Length:

2 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

2

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Maximum Seated Height:

.8 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.8 V

Nominal Supply Voltage (Vsup):

3.3 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL GOLD PALLADIUM

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Width (mm):

2 mm

Trade Compliance

NVT210DMTR2G Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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