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NTQD6968R2

Onsemi

NTQD6968R2 by Onsemi

The Onsemi NTQD6968R2 is a N-CHANNEL FET with 20V DS breakdown voltage, ideal for switching applications. Featuring common drain configuration, it has 2 elements with built-in diode and can handle up to 20A pulsed drain current. With a max operating temperature of 150 °C, this MOSFET offers low on-resistance of 0.022 ohm for efficient power dissipation in small outline package style.

Median Price

$0.502

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 20,040 parts In-Stock

1+ parts

-

100+ parts

$0.502

1k+ parts

$0.417

10k+ parts

$0.371

20,040

-

$0.502

$0.417

$0.371

DigiKey

USA . 20,040 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.430

10k+ parts

$0.430

20,040

-

-

$0.430

$0.430

Verical

USA . 13,540 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.521

10k+ parts

$0.464

13,540

-

-

$0.521

$0.464

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,753 parts In-Stock

1+ parts

$0.391

100+ parts

-

1k+ parts

-

10k+ parts

-

1,753

$0.391

-

-

-

Vyrian

USA . 2,262 parts In-Stock

1+ parts

$0.412

100+ parts

-

1k+ parts

-

10k+ parts

-

2,262

$0.412

-

-

-

Bristol Electronics

USA . 2,430 parts In-Stock

1+ parts

-

100+ parts

$0.487

1k+ parts

$0.210

10k+ parts

$0.195

2,430

-

$0.487

$0.210

$0.195

Microfarads

USA . 2,296 parts In-Stock

1+ parts

-

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2,296

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-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,152 parts In-Stock

1+ parts

$0.371

100+ parts

-

1k+ parts

-

10k+ parts

-

1,152

$0.371

-

-

-

Corohmni

South Africa . 427 parts In-Stock

1+ parts

$0.412

100+ parts

-

1k+ parts

-

10k+ parts

-

427

$0.412

-

-

-

Perfect Parts

USA . 28,001 parts In-Stock

1+ parts

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28,001

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-

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QUARKTWIN TECHNOLOGY LTD

USA . 26,384 parts In-Stock

1+ parts

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100+ parts

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26,384

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-

-

-

Continental Prestige Electronics

USA . 20,040 parts In-Stock

1+ parts

-

100+ parts

$0.400

1k+ parts

-

10k+ parts

-

20,040

-

$0.400

-

-

Authorized Procurement Solutions

USA . 10,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10,000

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Problanco Electronics

Mexico . 5,832 parts In-Stock

1+ parts

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5,832

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A-Z Elektronik GmbH

Germany . 5,648 parts In-Stock

1+ parts

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5,648

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Kulean Microsystems

USA . 3,624 parts In-Stock

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3,624

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Kepictronics

USA . 3,155 parts In-Stock

1+ parts

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3,155

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TANS Electronics

Latvia . 1,754 parts In-Stock

1+ parts

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100+ parts

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1,754

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-

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SupplyDigital Components

Austria . 1,528 parts In-Stock

1+ parts

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100+ parts

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1,528

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-

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Metaverse IC Inc.

Canada . 580 parts In-Stock

1+ parts

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100+ parts

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580

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UHIMA Technologies

Türkiye . 350 parts In-Stock

1+ parts

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100+ parts

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350

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Overview

Enhance the performance of your electronic devices with the NTQD6968R2 by Onsemi, a top-quality Power Field Effect Transistor (FET) perfect for switching applications. With a common drain configuration and built-in diode, this N-channel transistor offers reliable and efficient operation. Experience the benefits of its high power dissipation, low drain-source on resistance, and maximum pulsed drain current of 20A. Trust in Onsemi's expertise in semiconductor technology and elevate your products to the next level with the NTQD6968R2.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the product lightweight and durable, suitable for a variety of applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have lower ON-resistance and higher switching speeds compared to P-channel FETs, making them suitable for high-performance applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET provides efficient and reliable performance in controlling current flow.

Minimum DS Breakdown Voltage: 20 V

With a minimum breakdown voltage of 20 V, this FET can handle higher voltages without breakdown, ensuring reliable operation in various circuits.

Maximum Power Dissipation (Abs): 0.94 W

The low power dissipation of 0.94 W allows for efficient energy usage and thermal management, reducing the risk of overheating.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this FET can withstand higher temperatures, suitable for demanding industrial applications.

Maximum Drain-Source On Resistance: 0.022 ohm

The low ON-resistance of 0.022 ohms minimizes power loss and heat generation, making this FET ideal for high-efficiency circuits.

Technical Specifications

Power Field Effect Transistors (FET) NTQD6968R2 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Avalanche Energy Rating (EAS):

150 mJ

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

5.4 A

Maximum Drain Current (ID):

6.6 A

Maximum Drain-Source On Resistance:

.022 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

20 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTQD6968R2 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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