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NTL4502NT1G

Onsemi

NTL4502NT1G by Onsemi

NTL4502NT1G by Onsemi is a N-CHANNEL FET with 4 separate elements and built-in diode. It operates in enhancement mode for switching applications, with a max pulsed drain current of 32A. Featuring a max drain current of 11.4A and 0.013 ohm on-resistance, it is ideal for high-power switching circuits in various electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,374 parts In-Stock

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Vyrian

USA . 1,324 parts In-Stock

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TANS Electronics

Latvia . 7,330 parts In-Stock

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Problanco Electronics

Mexico . 5,904 parts In-Stock

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Kulean Microsystems

USA . 2,403 parts In-Stock

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SupplyDigital Components

Austria . 2,203 parts In-Stock

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Corphita

USA . 1,980 parts In-Stock

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Corohmni

South Africa . 182 parts In-Stock

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UHIMA Technologies

Türkiye . 65 parts In-Stock

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Overview

Discover the NTL4502NT1G by Onsemi, a top-tier manufacturer known for delivering high-quality Power Field Effect Transistors (FET). This N-CHANNEL transistor boasts a separate configuration with four elements and a built-in diode, making it perfect for switching applications. With a minimum DS breakdown voltage of 24V and a maximum pulsed drain current of 32A, this product offers superior performance and reliability. Whether you're in need of enhanced power management or improved efficiency, the NTL4502NT1G provides the value, benefits, and advantages that customers crave. Elevate your projects with this cutting-edge technology from Onsemi.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically offer lower ON-resistance and faster switching speeds compared to P-channel FETs, making them a suitable choice for high-performance applications.

Minimum DS Breakdown Voltage: 24 V

With a high breakdown voltage, this FET can handle higher voltage applications without risk of damage.

Maximum Pulsed Drain Current (IDM): 32 A

The high pulsed drain current rating allows the FET to handle sudden spikes in current without overheating or failing.

Maximum Drain Current (ID): 11.4 A

This FET can handle a continuous drain current of up to 11.4 A, making it suitable for moderate to high power applications.

Maximum Drain-Source On Resistance: 0.013 ohm

Low ON-resistance ensures efficient power transfer and minimal power loss, making this FET ideal for high-efficiency applications.

Transistor Application: SWITCHING

Designed for switching applications, this FET can rapidly turn on and off, making it suitable for power management and control systems.

Avalanche Energy Rating (EAS): 80 mJ

The high avalanche energy rating indicates the FET's ability to withstand high-energy spikes and surges, improving overall reliability and performance.

Technical Specifications

Power Field Effect Transistors (FET) NTL4502NT1G attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Avalanche Energy Rating (EAS):

80 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

24 V

Maximum Drain Current (ID):

11.4 A

Maximum Drain-Source On Resistance:

.013 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

S-XQCC-N16

No. of Elements:

4

No. of Terminals:

16

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

UNSPECIFIED

Package Shape:

SQUARE

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

32 A

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

NO LEAD

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTL4502NT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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