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NTHS4101PT1

Onsemi

NTHS4101PT1 by Onsemi

NTHS4101PT1 by Onsemi is a P-CHANNEL FET for switching applications. It features a 20V DS breakdown voltage, 4.8A max drain current, and 0.034 ohm max on resistance. With 190A pulsed drain current capability, it's ideal for enhancement mode operation in power electronics.

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Lifecycle Status

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6

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1k+

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Chip Stock

USA . 77,000 parts In-Stock

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Vyrian

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Digiode

USA . 1,359 parts In-Stock

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NPI Materials, Inc.

USA . 617 parts In-Stock

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QIE Inc.

USA . 190 parts In-Stock

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LWI Electronics Inc

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Component Stockers USA

USA . 4,566 parts In-Stock

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$0.590

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$0.560

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$0.540

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RC Electronics

USA . 27,000 parts In-Stock

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TANS Electronics

Latvia . 8,319 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,368 parts In-Stock

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Problanco Electronics

Mexico . 6,671 parts In-Stock

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Kulean Microsystems

USA . 4,381 parts In-Stock

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SupplyDigital Components

Austria . 3,008 parts In-Stock

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Corphita

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Futuretech Components

Singapore . 508 parts In-Stock

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UHIMA Technologies

Türkiye . 157 parts In-Stock

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Corohmni

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Overview

Unleash the power of cutting-edge technology with the NTHS4101PT1 by Onsemi. Crafted with precision and expertise, this P-CHANNEL Power FET is a game-changer in the world of switching applications. With a built-in diode and enhancement mode operation, this transistor offers unrivaled performance and efficiency. Experience seamless functionality and reliability like never before. Take your projects to new heights with the NTHS4101PT1 by Onsemi - where quality meets innovation.

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

P-channel FETs are known for their low on-state resistance and higher efficiency, making them a good choice for power applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in controlling power flow.

Minimum DS Breakdown Voltage: 20 V

With a minimum breakdown voltage of 20V, this FET can handle higher voltages safely, suitable for various power applications.

Maximum Pulsed Drain Current (IDM): 190 A

Capable of handling high pulsed currents, making it suitable for applications that require power surges such as motor control.

Maximum Drain Current (Abs) (ID): 4.8 A

With a maximum drain current of 4.8A, this FET can handle moderate power loads efficiently.

Maximum Power Dissipation (Abs): 1.3 W

Low power dissipation ensures minimal heat generation, improving overall reliability and longevity of the component.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOSFET technology offers high switching speeds and low input capacitance, making it suitable for high-frequency applications.

Maximum Drain-Source On Resistance: 0.034 ohm

Low on-resistance results in reduced power losses and improved efficiency in power switching applications.

Technical Specifications

Power Field Effect Transistors (FET) NTHS4101PT1 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

4.8 A

Maximum Drain Current (ID):

4.8 A

Maximum Drain-Source On Resistance:

.034 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-XDSO-C8

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

190 A

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

C BEND

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTHS4101PT1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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