Loading...

NTHC5513T1G

Onsemi

NTHC5513T1G by Onsemi

NTHC5513T1G by Onsemi is a Power FET with N & P-Channel, 2 elements w/ diode. Ideal for switching applications, it has max drain current of 3.1A, on-resistance of 0.08 ohm, and operates at up to 150°C. With small outline package style and matte tin finish, it's suitable for various electronic designs.

Median Price

$0.676

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 7 parts In-Stock

1+ parts

$0.034

100+ parts

-

1k+ parts

-

10k+ parts

-

7

$0.034

-

-

-

Rochester

USA . 5,539 parts In-Stock

1+ parts

$0.554

100+ parts

$0.521

1k+ parts

$0.471

10k+ parts

-

5,539

$0.554

$0.521

$0.471

-

Chip1Stop

Japan . 7 parts In-Stock

1+ parts

$0.798

100+ parts

-

1k+ parts

-

10k+ parts

-

7

$0.798

-

-

-

DigiKey

USA . 2,520 parts In-Stock

1+ parts

$1.860

100+ parts

$0.797

1k+ parts

$0.577

10k+ parts

-

2,520

$1.860

$0.797

$0.577

-

Flip Electronics (Authorized)

USA . 23,604 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

23,604

-

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,403 parts In-Stock

1+ parts

$0.236

100+ parts

-

1k+ parts

-

10k+ parts

-

2,403

$0.236

-

-

-

Nova Conductors

Japan . 200 parts In-Stock

1+ parts

$0.620

100+ parts

-

1k+ parts

-

10k+ parts

-

200

$0.620

-

-

-

Flip Electronics

USA . 70,800 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

70,800

-

-

-

-

Chip Stock

USA . 15,190 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

15,190

-

-

-

-

Vyrian

USA . 6,238 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,238

-

-

-

-

Component Sense

UK . 5,075 parts In-Stock

1+ parts

-

100+ parts

$0.263

1k+ parts

$0.150

10k+ parts

$0.135

5,075

-

$0.263

$0.150

$0.135

QIE Inc.

USA . 1,808 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,808

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 264 parts In-Stock

1+ parts

$0.081

100+ parts

-

1k+ parts

-

10k+ parts

-

264

$0.081

-

-

-

Ampacity Inc.

Singapore . 5,877 parts In-Stock

1+ parts

$0.100

100+ parts

-

1k+ parts

-

10k+ parts

-

5,877

$0.100

-

-

-

Semicontronic

India . 5,854 parts In-Stock

1+ parts

$0.100

100+ parts

$0.098

1k+ parts

$0.097

10k+ parts

-

5,854

$0.100

$0.098

$0.097

-

Corphita

USA . 775 parts In-Stock

1+ parts

$0.223

100+ parts

-

1k+ parts

-

10k+ parts

-

775

$0.223

-

-

-

Aztec Data Supply Inc.

USA . 1,297 parts In-Stock

1+ parts

$0.439

100+ parts

-

1k+ parts

-

10k+ parts

-

1,297

$0.439

-

-

-

Component Stockers USA

USA . 5 parts In-Stock

1+ parts

$0.470

100+ parts

-

1k+ parts

-

10k+ parts

-

5

$0.470

-

-

-

Argo Parts USA

USA . 2,568 parts In-Stock

1+ parts

$0.620

100+ parts

-

1k+ parts

-

10k+ parts

$0.601

2,568

$0.620

-

-

$0.601

Continental Prestige Electronics

USA . 2,450 parts In-Stock

1+ parts

$0.620

100+ parts

-

1k+ parts

-

10k+ parts

$0.607

2,450

$0.620

-

-

$0.607

Modulus Dynamics

Lithuania . 14,751 parts In-Stock

1+ parts

$1.145

100+ parts

$1.145

1k+ parts

$1.145

10k+ parts

-

14,751

$1.145

$1.145

$1.145

-

Microchip USA

USA . 256 parts In-Stock

1+ parts

$3.667

100+ parts

-

1k+ parts

-

10k+ parts

-

256

$3.667

-

-

-

Perfect Parts

USA . 23,852 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

23,852

-

-

-

-

TANS Electronics

Latvia . 8,300 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,300

-

-

-

-

Authorized Procurement Solutions

USA . 8,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,000

-

-

-

-

A-Z Elektronik GmbH

Germany . 6,822 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,822

-

-

-

-

Problanco Electronics

Mexico . 4,389 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,389

-

-

-

-

Kulean Microsystems

USA . 3,323 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,323

-

-

-

-

Lixinc

USA . 2,946 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,946

-

-

-

-

SupplyDigital Components

Austria . 2,420 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,420

-

-

-

-

Kepictronics

USA . 1,020 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,020

-

-

-

-

UHIMA Technologies

Türkiye . 880 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

880

-

-

-

-

Futuretech Components

Singapore . 509 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

509

-

-

-

-

Overview

Elevate your power management solutions with the NTHC5513T1G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Power Field Effect Transistors (FET) designed for high-performance applications like switching. With features like separate elements, built-in diode, and N-CHANNEL AND P-CHANNEL polarity, this transistor offers unparalleled convenience and efficiency. Experience enhanced power control and seamless operation with the NTHC5513T1G, making it the perfect choice for your next project. Unlock the potential of your electronics with Onsemi's cutting-edge technology.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL AND P-CHANNEL

Having both N-channel and P-channel options allows for flexibility in designing circuits for different applications.

Minimum DS Breakdown Voltage: 20 V

The high breakdown voltage of 20V ensures reliable performance and protection against voltage spikes.

Maximum Pulsed Drain Current (IDM): 10 A

The high pulsed drain current of 10A allows for handling sudden surges in current, making it suitable for applications requiring high power.

Maximum Power Dissipation (Abs): 1.1 W

The low power dissipation of 1.1W ensures efficient operation and minimal heat generation, contributing to overall reliability.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this FET can withstand higher temperatures, making it suitable for applications where heat dissipation is a concern.

Maximum Drain-Source On Resistance: 0.08 ohm

The low drain-source on resistance of 0.08 ohm results in lower power losses and improved efficiency in switching applications.

Technical Specifications

Power Field Effect Transistors (FET) NTHC5513T1G attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

2.1 A

Maximum Drain Current (ID):

3.1 A

Maximum Drain-Source On Resistance:

.08 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-XDSO-C8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

10 A

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

C BEND

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTHC5513T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 1