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NTF2N08

Onsemi

NTF2N08 by Onsemi

NTF2N08 by Onsemi is a single N-channel power FET with 80V DS breakdown voltage, ideal for switching applications. It features a plastic/epoxy package body, gull wing terminals, and operates in enhancement mode. This MOSFET has a small outline package style and drain case connection, suitable for surface mount designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,248 parts In-Stock

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Digiode

USA . 1,095 parts In-Stock

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1,095

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Kulean Microsystems

USA . 6,888 parts In-Stock

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6,888

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SupplyDigital Components

Austria . 6,303 parts In-Stock

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Problanco Electronics

Mexico . 5,658 parts In-Stock

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5,658

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TANS Electronics

Latvia . 3,712 parts In-Stock

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Corphita

USA . 973 parts In-Stock

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973

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UHIMA Technologies

Türkiye . 588 parts In-Stock

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588

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Corohmni

South Africa . 191 parts In-Stock

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Overview

Experience the power of innovation with the NTF2N08 by Onsemi. As a leading manufacturer in the industry, Onsemi's Power Field Effect Transistors (FET) are known for their reliability and performance. The NTF2N08 is perfect for switching applications, providing customers with enhanced efficiency and functionality. With a minimum DS Breakdown Voltage of 80V and a compact rectangular package shape, this N-CHANNEL transistor offers unparalleled value and benefits. Upgrade your projects with the NTF2N08 and unlock a world of possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides durability and reliability to the product.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have higher mobility and faster switching speeds compared to P-channel transistors, making this product suitable for high-performance applications.

Configuration: SINGLE

Single configuration simplifies the circuit design and integration process, making it easier to use in various applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET offers efficient and reliable performance in controlling power flow.

Surface Mount: YES

Surface mount design allows for easy and compact installation on PCBs, saving space and simplifying manufacturing processes.

Minimum DS Breakdown Voltage: 80 V

With a minimum breakdown voltage of 80 V, this FET can handle higher voltages effectively, ensuring stability and protection in high-power applications.

Package Shape: RECTANGULAR

Rectangular shape offers a standardized form factor for easy handling and integration in various electronic devices.

Terminal Form: GULL WING

Gull wing terminals provide secure and reliable connections, enhancing the overall performance and longevity of the product.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation allows for better control over the switching behavior of the transistor, ensuring efficient power management.

No. of Terminals: 4

Having 4 terminals provides flexibility in circuit configurations and connectivity options, enabling versatile use in different applications.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and facilitates compact designs, ideal for portable and space-constrained applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers superior performance, low power consumption, and high efficiency, making this FET a reliable choice for various applications.

Transistor Element Material: SILICON

Silicon-based transistor elements provide high conductivity, low power loss, and reliable operation, ensuring excellent performance and durability.

Terminal Finish: TIN LEAD

Tin lead terminal finish enhances solderability and conductivity, ensuring secure connections and reliable performance in the long run.

Terminal Position: DUAL

Dual terminal position allows for versatile mounting and connectivity options, making it easier to integrate this FET in various circuit configurations.

Case Connection: DRAIN

Drain connection offers efficient power flow control and enhances the overall performance and reliability of the transistor in power switching applications.

Technical Specifications

Power Field Effect Transistors (FET) NTF2N08 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Case Connection:

DRAIN

Configuration:

Minimum DS Breakdown Voltage:

80 V

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-261

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTF2N08 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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