Loading...

NSR20206NXT5G

Onsemi

NSR20206NXT5G by Onsemi

NSR20206NXT5G by Onsemi is a Schottky rectifier diode with 20V max repetitive peak reverse voltage, 0.49V max forward voltage, and 2A max output current. It is a single-config chip carrier diode ideal for efficiency applications at up to 150 °C operating temperature.

Median Price

$0.431

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 3,850 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.479

10k+ parts

-

3,850

-

-

$0.479

-

Rochester

USA . 1,591 parts In-Stock

1+ parts

-

100+ parts

$0.383

1k+ parts

$0.318

10k+ parts

$0.283

1,591

-

$0.383

$0.318

$0.283

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,539 parts In-Stock

1+ parts

$0.298

100+ parts

-

1k+ parts

-

10k+ parts

-

1,539

$0.298

-

-

-

Chip Stock

USA . 71,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

71,000

-

-

-

-

Vyrian

USA . 7,121 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,121

-

-

-

-

DigiKey Marketplace

USA . 3,850 parts In-Stock

1+ parts

-

100+ parts

$0.330

1k+ parts

-

10k+ parts

-

3,850

-

$0.330

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 358 parts In-Stock

1+ parts

$0.283

100+ parts

-

1k+ parts

-

10k+ parts

-

358

$0.283

-

-

-

Corohmni

South Africa . 482 parts In-Stock

1+ parts

$0.314

100+ parts

-

1k+ parts

-

10k+ parts

-

482

$0.314

-

-

-

AZTECH Wire

Italy . 1,062 parts In-Stock

1+ parts

$19.730

100+ parts

-

1k+ parts

-

10k+ parts

-

1,062

$19.730

-

-

-

TANS Electronics

Latvia . 6,413 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,413

-

-

-

-

SupplyDigital Components

Austria . 6,241 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,241

-

-

-

-

Problanco Electronics

Mexico . 3,901 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,901

-

-

-

-

Kulean Microsystems

USA . 3,645 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,645

-

-

-

-

UHIMA Technologies

Türkiye . 231 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

231

-

-

-

-

Overview

Unlock unparalleled efficiency with the NSR20206NXT5G by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and reliability in their diodes & rectifiers. This SCHOTTKY technology-based product offers maximum power dissipation of 0.51W and a maximum output current of 2A, making it perfect for applications where efficiency is key. With a fast reverse recovery time of 0.075us and a low forward voltage of 0.49V, this product provides exceptional value and performance for your projects. Elevate your designs with the NSR20206NXT5G and experience the benefits of superior technology and innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the diode lightweight and durable.

Config: SINGLE

Single configuration simplifies circuit design and reduces complexity.

Surface Mount: YES

Allows for easy and convenient mounting on PCBs.

Maximum Reverse Recovery Time: 0.075 us

Fast reverse recovery time ensures efficient diode operation.

Maximum Reverse Current: 150 uA

Low reverse current minimizes power losses.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this diode can withstand high temperatures in various applications.

Technical Specifications

Diodes & Rectifiers NSR20206NXT5G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

LOW LEAKAGE CURRENT

Application:

EFFICIENCY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.49 V

JESD-30 Code:

R-PBCC-N2

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

19 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.51 W

Maximum Repetitive Peak Reverse Voltage:

20 V

Maximum Reverse Current:

150 uA

Maximum Reverse Recovery Time:

.075 us

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NSR20206NXT5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 9