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NSR20305NXT5G

Onsemi

NSR20305NXT5G by Onsemi

NSR20305NXT5G by Onsemi is a SCHOTTKY RECTIFIER DIODE with 30V VR, 0.6V VF, and 2A IO. It has 0.04us Trr for EFFICIENCY applications at 150 °C max temp. This SINGLE diode in CHIP CARRIER package is SMD ready with 1.32W Pdiss capability.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 7,529 parts In-Stock

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Digiode

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AZTECH Wire

Italy . 549 parts In-Stock

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$18.780

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QUARKTWIN TECHNOLOGY LTD

USA . 24,567 parts In-Stock

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Kulean Microsystems

USA . 8,085 parts In-Stock

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Problanco Electronics

Mexico . 6,055 parts In-Stock

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SupplyDigital Components

Austria . 3,034 parts In-Stock

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TANS Electronics

Latvia . 1,043 parts In-Stock

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UHIMA Technologies

Türkiye . 912 parts In-Stock

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Corphita

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Corohmni

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Overview

Discover the next level in efficiency with the NSR20305NXT5G by Onsemi. This top-of-the-line rectifier diode offers unparalleled quality and reliability, making it a standout choice in the diodes & rectifiers category. With a maximum operating temperature of 150 °C and a peak reflow temperature of 260°C, this SCHOTTKY technology diode is built to handle demanding applications with ease. Whether you're looking to maximize power dissipation or optimize output current, this product delivers exceptional performance every time. Upgrade to the NSR20305NXT5G and experience the difference that superior technology can make in your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, making it suitable for various environments and applications.

Config: SINGLE

Simplified design with a single diode configuration.

Surface Mount: YES

Allows for easy and efficient installation on PCBs.

Maximum Reverse Recovery Time: 0.04 us

Fast reverse recovery time ensures efficient operation of the diode.

Maximum Reverse Current: 100 uA

Low reverse current minimizes power loss and improves overall efficiency.

Package Shape: RECTANGULAR

Compact design for space-saving applications.

No. of Terminals: 2

Simplified wiring with only two terminals.

Package Style (Meter): CHIP CARRIER

Efficient heat dissipation for improved performance.

Application: EFFICIENCY

Designed for high efficiency applications.

Maximum Operating Temperature: 150 °C

High operating temperature tolerance for versatile use.

Terminal Position: BOTTOM

Easy connectivity and installation.

Maximum Power Dissipation: 1.32 W

Ability to handle high power dissipation.

Maximum Time At Peak Reflow Temperature (s): 30

Withstands peak reflow temperature for efficient reflow soldering.

Peak Reflow Temperature °C: 260

High reflow temperature tolerance for reliable soldering.

Diode Type: RECTIFIER DIODE

Specifically designed for rectification purposes.

Maximum Forward Voltage (VF): 0.6 V

Low forward voltage drop for minimal power loss.

Maximum Output Current: 2 A

Capable of handling high output current.

Technology: SCHOTTKY

Schottky diode technology provides fast switching speed and low forward voltage drop.

Terminal Form: NO LEAD

Lead-free terminal design for environmental considerations.

Maximum Repetitive Peak Reverse Voltage: 30 V

Can withstand repetitive high reverse voltages.

Maximum Non Repetitive Peak Forward Current: 14 A

Capable of handling short-term high forward currents.

Diode Element Material: SILICON

Silicon diode material provides reliable performance and durability.

Technical Specifications

Diodes & Rectifiers NSR20305NXT5G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

LOW LEAKAGE CURRENT

Application:

EFFICIENCY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.6 V

JESD-30 Code:

R-PBCC-N2

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

14 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

1.32 W

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Current:

100 uA

Maximum Reverse Recovery Time:

.04 us

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NSR20305NXT5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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