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NSR20F20NXT5G

Onsemi

NSR20F20NXT5G by Onsemi

NSR20F20NXT5G by Onsemi is a SCHOTTKY RECTIFIER DIODE with 20V VR, 2A IO, and 0.42V VF. It is a SINGLE diode in CHIP CARRIER package for EFFICIENCY applications at up to 125°C. With surface mount capability and ANODE case connection, it offers high power dissipation of 1.56W.

Median Price

$0.300

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 65,730 parts In-Stock

1+ parts

$0.600

100+ parts

$0.339

1k+ parts

$0.206

10k+ parts

$0.163

65,730

$0.600

$0.339

$0.206

$0.163

DigiKey

USA . 11,972 parts In-Stock

1+ parts

$0.630

100+ parts

$0.237

1k+ parts

$0.188

10k+ parts

$0.150

11,972

$0.630

$0.237

$0.188

$0.150

Verical

USA . 190,000 parts In-Stock

1+ parts

-

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$0.171

190,000

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$0.171

Avnet

USA . 5,000 parts In-Stock

1+ parts

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$0.160

5,000

-

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$0.160

Chip1Stop

Japan . 4,720 parts In-Stock

1+ parts

-

100+ parts

$0.300

1k+ parts

$0.187

10k+ parts

$0.176

4,720

-

$0.300

$0.187

$0.176

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 150 parts In-Stock

1+ parts

$0.291

100+ parts

-

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150

$0.291

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Digiode

USA . 1,469 parts In-Stock

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$0.580

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1,469

$0.580

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Flip Electronics

USA . 190,000 parts In-Stock

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190,000

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Vyrian

USA . 28,033 parts In-Stock

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28,033

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SPM Sales

USA . 8,352 parts In-Stock

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8,352

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Inventory MP

USA . 5,462 parts In-Stock

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5,462

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Bristol Electronics

USA . 5,462 parts In-Stock

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5,462

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NAC Semi

USA . 5,000 parts In-Stock

1+ parts

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$0.294

5,000

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$0.294

Semtec, LLC

USA . 2,500 parts In-Stock

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2,500

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 44 parts In-Stock

1+ parts

$0.050

100+ parts

$0.046

1k+ parts

$0.041

10k+ parts

-

44

$0.050

$0.046

$0.041

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Ampacity Inc.

Singapore . 27,669 parts In-Stock

1+ parts

$0.253

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27,669

$0.253

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Corohmni

South Africa . 373 parts In-Stock

1+ parts

$0.286

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373

$0.286

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Continental Prestige Electronics

USA . 3,362 parts In-Stock

1+ parts

$0.291

100+ parts

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$0.286

3,362

$0.291

-

-

$0.286

Netroflash

USA . 2,000 parts In-Stock

1+ parts

$0.291

100+ parts

-

1k+ parts

$0.277

10k+ parts

$0.271

2,000

$0.291

-

$0.277

$0.271

Argo Parts USA

USA . 802 parts In-Stock

1+ parts

$0.291

100+ parts

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$0.283

802

$0.291

-

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$0.283

Corphita

USA . 642 parts In-Stock

1+ parts

$0.549

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642

$0.549

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Benley Electronics

USA . 1 parts In-Stock

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$1.000

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1

$1.000

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Perfect Parts

USA . 163,495 parts In-Stock

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Kepictronics

USA . 65,850 parts In-Stock

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RC Electronics

USA . 25,000 parts In-Stock

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Futuretech Components

Singapore . 20,000 parts In-Stock

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Kulean Microsystems

USA . 7,357 parts In-Stock

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Lixinc

USA . 4,990 parts In-Stock

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4,990

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Problanco Electronics

Mexico . 3,282 parts In-Stock

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A-Z Elektronik GmbH

Germany . 1,728 parts In-Stock

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1,728

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UHIMA Technologies

Türkiye . 570 parts In-Stock

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570

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SupplyDigital Components

Austria . 408 parts In-Stock

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408

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TANS Electronics

Latvia . 128 parts In-Stock

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128

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GreenTree Electronics

Israel . 111 parts In-Stock

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Authorized Procurement Solutions

USA . 80 parts In-Stock

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80

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Overview

Unlock unparalleled efficiency and performance with the NSR20F20NXT5G by Onsemi. As a leading manufacturer in diodes & rectifiers, Onsemi delivers top-notch quality and reliability. This SCHOTTKY technology-based rectifier diode is designed for maximum power dissipation and output current, making it ideal for applications where efficiency is key. Say goodbye to subpar performance and hello to superior results with the NSR20F20NXT5G by Onsemi.

Feature Benefit Bullets

Config: SINGLE

SINGLE configuration makes the product easy to use and suitable for simple applications.

Surface Mount: YES

Surface mount capability allows for easy and efficient installation on circuit boards.

Package Shape: RECTANGULAR

Rectangular shape makes the product compatible with standard packaging and assembly processes.

No. of Terminals: 2

Having only 2 terminals simplifies the wiring and connection process.

Package Style (Meter): CHIP CARRIER

Chip carrier package style enhances thermal performance and compactness.

Application: EFFICIENCY

This product is designed for optimal efficiency in its intended applications.

Maximum Operating Temperature: 125 °C

Operates efficiently at high temperatures, suitable for various environments.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy mounting and connections in circuit layouts.

Case Connection: ANODE

Anode case connection simplifies circuit design and layout.

Maximum Power Dissipation: 1.56 W

High power dissipation capability ensures reliable performance under load.

Maximum Time At Peak Reflow Temperature (s): 30

Short reflow time avoids component damage during assembly processes.

Peak Reflow Temperature °C: 260

Can withstand high reflow temperatures without impacting functionality.

Diode Type: RECTIFIER DIODE

Rectifier diode type enables efficient conversion of AC to DC currents.

Maximum Forward Voltage (VF): 0.42 V

Low forward voltage drop minimizes energy loss and enhances overall efficiency.

Maximum Output Current: 2 A

Capable of handling high output currents without compromising performance.

Technology: SCHOTTKY

Schottky technology provides fast switching speeds and low forward voltage drop.

Terminal Form: NO LEAD

No lead terminal form simplifies installation and improves electrical performance.

Maximum Repetitive Peak Reverse Voltage: 20 V

Can withstand high reverse voltages repeatedly without damage.

Maximum Non Repetitive Peak Forward Current: 28 A

Capable of handling high peak currents for short durations without failure.

Diode Element Material: SILICON

Silicon diode element material ensures durability and stability in operation.

Technical Specifications

Diodes & Rectifiers NSR20F20NXT5G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

LOW LEAKAGE CURRENT

Application:

EFFICIENCY

Case Connection:

ANODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.42 V

JESD-30 Code:

R-XBCC-N2

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

28 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Maximum Output Current:

2 A

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

1.56 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

20 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NSR20F20NXT5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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