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NSR20306NXT5G

Onsemi

NSR20306NXT5G by Onsemi

NSR20306NXT5G by Onsemi is a SCHOTTKY RECTIFIER DIODE with 30V VRRM, 0.495V VF, and 2A Iout. It has 0.063us trr and 150uA Ir. This single-config chip carrier diode in plastic/epoxy package is ideal for efficiency applications at up to 150 °C.

Median Price

$0.383

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 3,415 parts In-Stock

1+ parts

-

100+ parts

$0.383

1k+ parts

$0.318

10k+ parts

$0.283

3,415

-

$0.383

$0.318

$0.283

DigiKey

USA . 3,407 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.330

10k+ parts

-

3,407

-

-

$0.330

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Verical

USA . 3,407 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.398

10k+ parts

$0.354

3,407

-

-

$0.398

$0.354

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 245 parts In-Stock

1+ parts

$0.298

100+ parts

-

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-

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245

$0.298

-

-

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Vyrian

USA . 1,532 parts In-Stock

1+ parts

$0.314

100+ parts

-

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1,532

$0.314

-

-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 903 parts In-Stock

1+ parts

$0.283

100+ parts

-

1k+ parts

-

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903

$0.283

-

-

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Corohmni

South Africa . 74 parts In-Stock

1+ parts

$0.314

100+ parts

-

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74

$0.314

-

-

-

Component Stockers USA

USA . 6,252 parts In-Stock

1+ parts

$0.320

100+ parts

$0.300

1k+ parts

$0.270

10k+ parts

-

6,252

$0.320

$0.300

$0.270

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Kulean Microsystems

USA . 4,914 parts In-Stock

1+ parts

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100+ parts

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4,914

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

1+ parts

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4,000

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TANS Electronics

Latvia . 2,539 parts In-Stock

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2,539

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Problanco Electronics

Mexico . 2,172 parts In-Stock

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2,172

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UHIMA Technologies

Türkiye . 302 parts In-Stock

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302

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SupplyDigital Components

Austria . 59 parts In-Stock

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59

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Overview

Experience a new level of efficiency with the NSR20306NXT5G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers high-quality diodes and rectifiers that are essential for various applications. This SCHOTTKY technology ensures a maximum output current of 2A and a maximum reverse recovery time of 0.063us, making it perfect for tasks that require precision and reliability. With a peak reflow temperature of 260 °C and a maximum power dissipation of 0.51W, this product guarantees durability and performance. Upgrade your systems with the NSR20306NXT5G and experience the benefits firsthand.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package provides good insulation and mechanical protection, making the diode more durable and reliable.

Config: SINGLE

Single configuration simplifies circuit design and makes the diode easy to use in various applications.

Surface Mount: YES

Surface mount capability allows for easy installation and saves valuable PCB space.

Maximum Reverse Recovery Time: 0.063 us

Fast reverse recovery time ensures efficient operation and reduces power loss in the system.

Maximum Reverse Current: 150 uA

Low reverse current minimizes power dissipation and improves overall efficiency.

Package Shape: RECTANGULAR

Rectangular package shape simplifies PCB layout and ensures easy integration into the circuit.

No. of Terminals: 2

Having only 2 terminals simplifies connection and reduces potential points of failure in the system.

Package Style (Meter): CHIP CARRIER

Chip carrier style offers compact size and efficient heat dissipation for better performance.

Application: EFFICIENCY

Designed for efficiency, this diode is suitable for applications where power consumption needs to be minimized.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for reliable operation in a wide range of environments.

Terminal Position: BOTTOM

Bottom terminal position makes it easier to mount the diode on the PCB and ensures better thermal management.

Maximum Power Dissipation: 0.51 W

High power dissipation rating allows the diode to handle high power loads without overheating.

Maximum Time At Peak Reflow Temperature (s): 30

Long time at peak reflow temperature ensures proper soldering and connection reliability.

Peak Reflow Temperature °C: 260

Peak reflow temperature of 260 °C ensures proper solder melting and connection integrity during assembly.

Diode Type: RECTIFIER DIODE

Rectifier diode specifically designed for rectifying AC to DC, making it suitable for various power supply applications.

Maximum Forward Voltage (VF): 0.495 V

Low forward voltage drop helps minimize power losses and improve efficiency in the circuit.

Maximum Output Current: 2 A

High output current rating allows the diode to handle heavy loads without any issues.

Technology: SCHOTTKY

Schottky technology ensures low forward voltage drop and fast switching speed, providing efficient rectification.

Terminal Form: NO LEAD

No lead terminal form is suitable for surface mount applications and ensures easy connection to the PCB.

Maximum Repetitive Peak Reverse Voltage: 30 V

High repetitive peak reverse voltage rating makes the diode suitable for various voltage levels in the circuit.

Maximum Non Repetitive Peak Forward Current: 19 A

High non-repetitive peak forward current rating allows the diode to handle short-term overload conditions without failing.

Diode Element Material: SILICON

Silicon diode element material offers good reliability and performance in a wide range of operating conditions.

Technical Specifications

Diodes & Rectifiers NSR20306NXT5G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

LOW LEAKAGE CURRENT

Application:

EFFICIENCY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.495 V

JESD-30 Code:

R-PBCC-N2

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

19 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.51 W

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Current:

150 uA

Maximum Reverse Recovery Time:

.063 us

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NSR20306NXT5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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