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NSR0320XV6T1

Onsemi

NSR0320XV6T1 by Onsemi

NSR0320XV6T1 by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.27V and output current of 1A. It operates at a max temperature of 150 °C, making it suitable for applications requiring high efficiency and fast switching capabilities in electronic circuits. The diode's small outline package with dual terminals and flat form factor enables easy surface mount installation in various devices.

Median Price

$0.066

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 35,455 parts In-Stock

1+ parts

-

100+ parts

$0.066

1k+ parts

$0.055

10k+ parts

$0.049

35,455

-

$0.066

$0.055

$0.049

DigiKey

USA . 35,455 parts In-Stock

1+ parts

-

100+ parts

-

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$0.080

35,455

-

-

-

$0.080

Verical

USA . 32,000 parts In-Stock

1+ parts

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$0.061

32,000

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-

$0.061

Distributors (In-Stock)

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Digiode

USA . 1,600 parts In-Stock

1+ parts

$0.051

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1,600

$0.051

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Chip Stock

USA . 37,000 parts In-Stock

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37,000

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Vyrian

USA . 9,662 parts In-Stock

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9,662

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Next Level Components, LLC

USA . 4,000 parts In-Stock

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4,000

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Prism Electronics

USA . 758 parts In-Stock

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758

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Mil-Aero Solutions, Inc.

USA . 55 parts In-Stock

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55

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Distributors (Availability)

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Corphita

USA . 2,000 parts In-Stock

1+ parts

$0.049

100+ parts

-

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2,000

$0.049

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Corohmni

South Africa . 54 parts In-Stock

1+ parts

$0.054

100+ parts

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54

$0.054

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Component Stockers USA

USA . 37,072 parts In-Stock

1+ parts

$0.060

100+ parts

$0.050

1k+ parts

$0.050

10k+ parts

$0.050

37,072

$0.060

$0.050

$0.050

$0.050

AZTECH Wire

Italy . 378 parts In-Stock

1+ parts

$8.860

100+ parts

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378

$8.860

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Continental Prestige Electronics

USA . 35,455 parts In-Stock

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$0.052

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35,455

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$0.052

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QUARKTWIN TECHNOLOGY LTD

USA . 21,541 parts In-Stock

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21,541

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Kulean Microsystems

USA . 8,100 parts In-Stock

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TANS Electronics

Latvia . 5,207 parts In-Stock

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SupplyDigital Components

Austria . 3,244 parts In-Stock

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3,244

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Problanco Electronics

Mexico . 3,139 parts In-Stock

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Perfect Parts

USA . 1,065 parts In-Stock

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1,065

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UHIMA Technologies

Türkiye . 504 parts In-Stock

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504

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GreenTree Electronics

Israel . 100 parts In-Stock

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100

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Overview

Discover the NSR0320XV6T1 by Onsemi, a high-quality rectifier diode that offers reliable performance and efficiency. Manufactured by Onsemi, a trusted leader in the industry, this diode is perfect for a variety of applications. With its Schottky technology and small outline package style, this diode provides excellent value to customers looking for superior quality and performance. Whether you're designing power supplies, voltage converters, or other electronic devices, the NSR0320XV6T1 is sure to meet your needs with its maximum output current of 1A and maximum forward voltage of 0.27V. Upgrade your projects with the NSR0320XV6T1 and experience the benefits of using a top-of-the-line diode from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good mechanical protection and insulation for the diode, making it durable and reliable.

Surface Mount: YES

Allows for easy and convenient placement on printed circuit boards, saving space and simplifying assembly.

Maximum Operating Temperature: 150 °C

Can operate at relatively high temperatures, ensuring stable performance in demanding environments.

Maximum Power Dissipation: 0.2 W

Efficiently handles power dissipation, reducing the risk of overheating and ensuring long-term reliability.

Diode Type: RECTIFIER DIODE

Specifically designed for rectifying AC to DC, making it suitable for various electronic applications.

Maximum Forward Voltage (VF): 0.27 V

Low forward voltage drop minimizes energy loss and improves efficiency in the system.

Maximum Output Current: 1 A

Capable of handling high output currents, making it suitable for applications that require higher power levels.

Technology: SCHOTTKY

Schottky diodes have faster switching speeds and lower forward voltage drop compared to standard silicon diodes, enhancing performance.

Maximum Repetitive Peak Reverse Voltage: 23 V

Can withstand high reverse voltage spikes, providing protection to the circuit and ensuring reliability.

Diode Element Material: SILICON

Silicon is a common and reliable material for diode fabrication, ensuring stable performance and durability.

Technical Specifications

Diodes & Rectifiers NSR0320XV6T1 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.27 V

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

7.5 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

23 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NSR0320XV6T1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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