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NSDEMN11XV6T1G

Onsemi

NSDEMN11XV6T1G by Onsemi

NSDEMN11XV6T1G by Onsemi is a rectifier diode with 2 banks, common cathode, and 2 elements. It has a max reverse recovery time of 0.004 us and a max output current of 0.1 A. This diode is suitable for applications requiring fast switching speeds and low reverse current requirements.

Median Price

$0.053

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 25,500 parts In-Stock

1+ parts

-

100+ parts

$0.053

1k+ parts

$0.044

10k+ parts

$0.039

25,500

-

$0.053

$0.044

$0.039

DigiKey

USA . 25,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.070

25,500

-

-

-

$0.070

Verical

USA . 25,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.049

25,500

-

-

-

$0.049

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 334 parts In-Stock

1+ parts

$0.041

100+ parts

-

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334

$0.041

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Chip Stock

USA . 49,000 parts In-Stock

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49,000

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Vyrian

USA . 7,748 parts In-Stock

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7,748

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Sensible Micro Corp

USA . 128 parts In-Stock

1+ parts

-

100+ parts

$0.078

1k+ parts

$0.072

10k+ parts

-

128

-

$0.078

$0.072

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,607 parts In-Stock

1+ parts

$0.039

100+ parts

-

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1,607

$0.039

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Corohmni

South Africa . 330 parts In-Stock

1+ parts

$0.043

100+ parts

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330

$0.043

-

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-

Advanced Electronics

New Zealand . 600 parts In-Stock

1+ parts

$0.063

100+ parts

$0.057

1k+ parts

$0.052

10k+ parts

-

600

$0.063

$0.057

$0.052

-

AZTECH Wire

Italy . 490 parts In-Stock

1+ parts

$10.840

100+ parts

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490

$10.840

-

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Continental Prestige Electronics

USA . 25,500 parts In-Stock

1+ parts

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100+ parts

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$0.049

25,500

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$0.049

Authorized Procurement Solutions

USA . 10,000 parts In-Stock

1+ parts

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10,000

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QUARKTWIN TECHNOLOGY LTD

USA . 6,744 parts In-Stock

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6,744

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Problanco Electronics

Mexico . 5,406 parts In-Stock

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5,406

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SupplyDigital Components

Austria . 4,932 parts In-Stock

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4,932

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Kulean Microsystems

USA . 3,263 parts In-Stock

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3,263

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TANS Electronics

Latvia . 1,143 parts In-Stock

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1,143

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UHIMA Technologies

Türkiye . 920 parts In-Stock

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920

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Overview

Experience superior quality and reliability with the NSDEMN11XV6T1G diode & rectifier by Onsemi. Perfect for a wide range of applications, this product offers unmatched performance and efficiency. With its common cathode configuration and small outline package style, customers can expect seamless integration and optimal functionality. Trust in Onsemi's reputation for excellence in manufacturing to deliver a product that exceeds expectations. Maximize your value with the NSDEMN11XV6T1G and unlock a world of benefits for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, suitable for various applications.

Config: 2 BANKS, COMMON CATHODE, 2 ELEMENTS

This configuration allows for efficient and reliable operation by having two banks with a common cathode and two elements.

Maximum Reverse Recovery Time: 0.004 us

The fast reverse recovery time of 0.004 us ensures quick and efficient switching performance of the diodes.

Maximum Reverse Current: 0.1 uA

The low maximum reverse current of 0.1 uA indicates the high efficiency and low leakage of the diodes.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this product can withstand high temperature environments reliably.

Technical Specifications

Diodes & Rectifiers NSDEMN11XV6T1G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

2 BANKS, COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.2 V

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

4

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

.1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

80 V

Maximum Reverse Current:

.1 uA

Maximum Reverse Recovery Time:

.004 us

Reverse Test Voltage:

70 V

Sub-Category:

Signal Diodes

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NSDEMN11XV6T1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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