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NSDEMN11XV6T1

Onsemi

NSDEMN11XV6T1 by Onsemi

NSDEMN11XV6T1 by Onsemi is a rectifier diode with 2 banks, common cathode, and 2 elements. It has a max reverse recovery time of 0.004 us and a max output current of 0.1 A. This diode is suitable for applications requiring a small outline package style and operating temperatures ranging from -55 to 150 °C.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Mil-Aero Solutions, Inc.

USA . 1,773 parts In-Stock

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Digiode

USA . 1,630 parts In-Stock

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Vyrian

USA . 721 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 28,368 parts In-Stock

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Problanco Electronics

Mexico . 5,646 parts In-Stock

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TANS Electronics

Latvia . 4,151 parts In-Stock

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SupplyDigital Components

Austria . 3,100 parts In-Stock

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Corphita

USA . 1,280 parts In-Stock

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Kulean Microsystems

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Corohmni

South Africa . 490 parts In-Stock

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UHIMA Technologies

Türkiye . 330 parts In-Stock

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Overview

Unlock the potential of your electronic devices with the NSDEMN11XV6T1 diode by Onsemi. As a leading manufacturer in the industry, Onsemi guarantees top-notch quality and reliability. This diode offers fast reverse recovery time, low reverse current, and high operating temperatures, making it ideal for a wide range of applications. From power supplies to battery chargers, this diode provides exceptional performance and efficiency. Trust Onsemi's expertise and choose the NSDEMN11XV6T1 for all your diode and rectifier needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good insulation and protection for the diodes, making them durable and long-lasting.

Config: 2 BANKS, COMMON CATHODE, 2 ELEMENTS

This configuration allows for efficient use of multiple diodes in a common circuit, providing stability and reliability.

Surface Mount: YES

Surface mount capability enables easy and convenient installation onto circuit boards, saving space and simplifying assembly.

Maximum Reverse Recovery Time: 0.004 us

Fast reverse recovery time ensures minimal energy loss and efficient operation of the diodes.

Maximum Reverse Current: 0.1 uA

Low reverse current indicates high reverse leakage performance, leading to better overall efficiency.

Package Shape: RECTANGULAR

Rectangular package shape allows for efficient use of space and easy integration into various electronic devices.

Reverse Test Voltage: 70 V

With a high reverse test voltage, these diodes can handle substantial voltages, making them suitable for a wide range of applications.

No. of Terminals: 6

Having 6 terminals provides flexibility in circuit design and connection options for different requirements.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the circuit board and allows for dense packing of components.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures stable performance even in demanding environmental conditions.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature range allows for use in a variety of temperature conditions without performance degradation.

Terminal Finish: TIN

Tin terminal finish provides good conductivity and corrosion resistance, ensuring reliable connections.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit layout and connection options for different applications.

Maximum Power Dissipation: 0.5 W

High power dissipation capability allows the diodes to handle significant power loads without overheating.

Peak Reflow Temperature °C: 260

High peak reflow temperature facilitates efficient soldering during assembly, ensuring strong and reliable connections.

Diode Type: RECTIFIER DIODE

Rectifier diodes are specifically designed for converting alternating current (AC) to direct current (DC), making them ideal for power supply applications.

Maximum Forward Voltage (VF): 1.2 V

Low forward voltage drop reduces power loss and heat generation, improving overall efficiency.

Maximum Output Current: 0.1 A

With a maximum output current of 0.1 A, these diodes can handle moderate current loads, suitable for many electronic applications.

Terminal Form: FLAT

Flat terminal form simplifies soldering and ensures secure connections during installation.

No. of Elements: 4

Having 4 elements allows for multiple diodes to be used in a single package, providing increased functionality and versatility.

Maximum Repetitive Peak Reverse Voltage: 80 V

High repetitive peak reverse voltage rating ensures the diodes can withstand reverse voltage spikes, enhancing reliability in circuit protection.

Diode Element Material: SILICON

Silicon diode element material is widely used for its high efficiency, reliability, and stability in various electronic applications.

Technical Specifications

Diodes & Rectifiers NSDEMN11XV6T1 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

2 BANKS, COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.2 V

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

4

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

.1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

80 V

Maximum Reverse Current:

.1 uA

Maximum Reverse Recovery Time:

.004 us

Reverse Test Voltage:

70 V

Sub-Category:

Signal Diodes

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

NSDEMN11XV6T1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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