Loading...

NSDEMP11XV6T1

Onsemi

NSDEMP11XV6T1 by Onsemi

NSDEMP11XV6T1 by Onsemi is a rectifier diode with 2 banks, common anode, and 2 elements. It has a max reverse recovery time of 0.004 us and max output current of 0.1 A. Ideal for applications requiring a small outline package with peak reflow temperature of 260 °C.

Median Price

$0.051

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 16,049 parts In-Stock

1+ parts

-

100+ parts

$0.053

1k+ parts

$0.044

10k+ parts

$0.039

16,049

-

$0.053

$0.044

$0.039

Verical

USA . 12,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.049

12,000

-

-

-

$0.049

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,414 parts In-Stock

1+ parts

$0.041

100+ parts

-

1k+ parts

-

10k+ parts

-

2,414

$0.041

-

-

-

Vyrian

USA . 1,928 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,928

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,978 parts In-Stock

1+ parts

$0.039

100+ parts

-

1k+ parts

-

10k+ parts

-

1,978

$0.039

-

-

-

Corohmni

South Africa . 467 parts In-Stock

1+ parts

$0.043

100+ parts

-

1k+ parts

-

10k+ parts

-

467

$0.043

-

-

-

AZTECH Wire

Italy . 460 parts In-Stock

1+ parts

$15.340

100+ parts

-

1k+ parts

-

10k+ parts

-

460

$15.340

-

-

-

RC Electronics

USA . 25,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

25,000

-

-

-

-

Continental Prestige Electronics

USA . 16,049 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.049

16,049

-

-

-

$0.049

QUARKTWIN TECHNOLOGY LTD

USA . 8,218 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,218

-

-

-

-

Kulean Microsystems

USA . 3,808 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,808

-

-

-

-

TANS Electronics

Latvia . 3,007 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,007

-

-

-

-

Metaverse IC Inc.

Canada . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,000

-

-

-

-

SupplyDigital Components

Austria . 2,724 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,724

-

-

-

-

Problanco Electronics

Mexico . 2,521 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,521

-

-

-

-

Perfect Parts

USA . 616 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

616

-

-

-

-

UHIMA Technologies

Türkiye . 35 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

35

-

-

-

-

Overview

Discover the reliable and efficient NSDEMP11XV6T1 diode by Onsemi, a leading manufacturer in the industry. Ideal for a variety of applications, this diode offers superior quality and performance. With its fast reverse recovery time and low reverse current, this product ensures optimal functionality. Whether used in consumer electronics or industrial equipment, the NSDEMP11XV6T1 delivers value and benefits to customers seeking high-quality components for their projects. Trust Onsemi for all your diode needs and experience the difference in performance and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diodes, making it suitable for various operating conditions.

Config: 2 BANKS, COMMON ANODE, 2 ELEMENTS

Allows for versatile circuit configurations and connectivity options.

Surface Mount: YES

Facilitates easy and convenient installation on circuit boards.

Maximum Reverse Recovery Time: 0.004 us

Ensures fast switching speeds and efficient operation.

Maximum Reverse Current: 0.1 uA

Helps in minimizing power loss and improving overall efficiency.

Package Shape: RECTANGULAR

Optimizes space utilization and allows for compact designs.

Reverse Test Voltage: 70 V

Offers high voltage capacity for reliable performance in reverse polarity conditions.

No. of Terminals: 6

Provides multiple connection points for flexible integration into circuits.

Package Style (Meter): SMALL OUTLINE

Enhances compatibility with various equipment and devices.

Maximum Operating Temperature: 150 °C

Can withstand high operating temperatures, ensuring stability in demanding environments.

Minimum Operating Temperature: -55 °C

Allows for operation in low-temperature conditions without performance degradation.

Terminal Finish: TIN

Provides good conductivity and corrosion resistance for reliable connections.

Terminal Position: DUAL

Enables easy installation and connection with other components.

Maximum Power Dissipation: 0.5 W

Can handle moderate power levels without overheating or damage.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures proper soldering and mounting during assembly processes.

Peak Reflow Temperature °C: 260

Withstands high reflow temperatures for reliable solder joints.

Diode Type: RECTIFIER DIODE

Specifically designed for rectification applications, ensuring efficient conversion of AC to DC.

Maximum Forward Voltage (VF): 1.2 V

Maintains low voltage drop during forward conduction, reducing power loss.

Maximum Output Current: 0.1 A

Suits low to moderate current requirements for various electronic circuits.

Terminal Form: FLAT

Facilitates easy soldering and secure connections on circuit boards.

No. of Elements: 4

Provides multiple diode elements for enhanced functionality and circuit design options.

Maximum Repetitive Peak Reverse Voltage: 80 V

Offers higher voltage tolerance for reverse polarity protection and reliability.

Diode Element Material: SILICON

Utilizes silicon material for superior electrical characteristics and performance.

Technical Specifications

Diodes & Rectifiers NSDEMP11XV6T1 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

2 BANKS, COMMON ANODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.2 V

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

4

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

.1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

80 V

Maximum Reverse Current:

.1 uA

Maximum Reverse Recovery Time:

.004 us

Reverse Test Voltage:

70 V

Sub-Category:

Other Diodes

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NSDEMP11XV6T1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 7