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NSDEMN11XV6T5G

Onsemi

NSDEMN11XV6T5G by Onsemi

NSDEMN11XV6T5G by Onsemi is a rectifier diode with 2 banks, common cathode, and 2 elements. It has a max reverse recovery time of 0.004 us and operates b/w -55 to 150 °C. Suitable for applications requiring a small outline package with peak reflow temperature of 260 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,174 parts In-Stock

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Digiode

USA . 954 parts In-Stock

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954

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Problanco Electronics

Mexico . 7,368 parts In-Stock

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SupplyDigital Components

Austria . 2,843 parts In-Stock

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TANS Electronics

Latvia . 2,409 parts In-Stock

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Corphita

USA . 2,354 parts In-Stock

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Kulean Microsystems

USA . 991 parts In-Stock

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Corohmni

South Africa . 272 parts In-Stock

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UHIMA Technologies

Türkiye . 68 parts In-Stock

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Overview

Discover the unbeatable quality of the NSDEMN11XV6T5G by Onsemi, a top-of-the-line diode & rectifier that offers unparalleled performance and reliability. With a sleek package body material and advanced configuration, this product is perfect for a wide range of applications. From its fast reverse recovery time to its low reverse current, this diode ensures optimal efficiency in any project. Trust in the expertise of Onsemi and experience the value and benefits that the NSDEMN11XV6T5G brings to your electronic designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight, durable, and cost-effective, making the product suitable for various applications.

Maximum Reverse Recovery Time: 0.004 us

The fast reverse recovery time ensures efficient operation and minimizes energy loss in the circuit.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this product can withstand demanding operating conditions without degradation.

Maximum Output Current: 0.1 A

The high maximum output current allows for reliable performance in applications requiring moderate current levels.

Diode Element Material: SILICON

Silicon is a common semiconductor material known for its stable and consistent performance in diode applications.

Technical Specifications

Diodes & Rectifiers NSDEMN11XV6T5G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

2 BANKS, COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.2 V

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

4

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

.1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

80 V

Maximum Reverse Current:

.1 uA

Maximum Reverse Recovery Time:

.004 us

Reverse Test Voltage:

70 V

Sub-Category:

Signal Diodes

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

NSDEMN11XV6T5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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