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NSDEMP11XV6T5G

Onsemi

NSDEMP11XV6T5G by Onsemi

NSDEMP11XV6T5G by Onsemi is a rectifier diode with 2 elements, common anode config, and small outline package. It has a max reverse recovery time of 0.004 us and operates b/w -55 to 150 °C. Ideal for applications requiring a diode with low forward voltage and high repetitive peak reverse voltage.

Median Price

$0.100

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 16,000 parts In-Stock

1+ parts

$0.038

100+ parts

-

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16,000

$0.038

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Rochester

USA . 239,882 parts In-Stock

1+ parts

-

100+ parts

$0.110

1k+ parts

$0.091

10k+ parts

$0.081

239,882

-

$0.110

$0.091

$0.081

DigiKey

USA . 239,882 parts In-Stock

1+ parts

-

100+ parts

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$0.090

239,882

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$0.090

Farnell

UK . 239,882 parts In-Stock

1+ parts

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$0.100

239,882

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$0.100

Verical

USA . 96,000 parts In-Stock

1+ parts

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$0.102

96,000

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-

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$0.102

Flip Electronics (Authorized)

USA . 32,000 parts In-Stock

1+ parts

-

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32,000

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Chip1Stop

Japan . 16,000 parts In-Stock

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16,000

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Distributors (In-Stock)

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Digiode

USA . 1,168 parts In-Stock

1+ parts

$0.036

100+ parts

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1,168

$0.036

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Vyrian

USA . 2,042 parts In-Stock

1+ parts

$0.038

100+ parts

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2,042

$0.038

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Flip Electronics

USA . 32,000 parts In-Stock

1+ parts

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100+ parts

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32,000

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,127 parts In-Stock

1+ parts

$0.034

100+ parts

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2,127

$0.034

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Corohmni

South Africa . 128 parts In-Stock

1+ parts

$0.039

100+ parts

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128

$0.039

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Component Stockers USA

USA . 360,013 parts In-Stock

1+ parts

$0.070

100+ parts

$0.070

1k+ parts

$0.070

10k+ parts

$0.050

360,013

$0.070

$0.070

$0.070

$0.050

Continental Prestige Electronics

USA . 239,882 parts In-Stock

1+ parts

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100+ parts

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$0.079

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239,882

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$0.079

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QUARKTWIN TECHNOLOGY LTD

USA . 22,166 parts In-Stock

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Problanco Electronics

Mexico . 5,904 parts In-Stock

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5,904

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SupplyDigital Components

Austria . 4,918 parts In-Stock

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4,918

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TANS Electronics

Latvia . 3,850 parts In-Stock

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3,850

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Kulean Microsystems

USA . 3,020 parts In-Stock

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3,020

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UHIMA Technologies

Türkiye . 710 parts In-Stock

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710

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Overview

Elevate your electronic designs with the NSDEMP11XV6T5G by Onsemi, a top-tier manufacturer in the Diodes & Rectifiers category. This high-quality product boasts two banks, common anode, and two elements for efficient performance. With a maximum reverse recovery time of 0.004 us and a maximum reverse current of 0.1 uA, this diode offers unrivaled reliability. Perfect for applications requiring precision and durability, this small outline package is designed to excel in a wide range of operating temperatures. Trust Onsemi to deliver exceptional value and benefits with the NSDEMP11XV6T5G, setting you up for success in your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diodes, ensuring a longer lifespan.

Config: 2 BANKS, COMMON ANODE, 2 ELEMENTS

Allows for versatile circuit configurations and compatibility with various applications.

Surface Mount: YES

Easily mountable on circuit boards, saving space and simplifying installation.

Maximum Reverse Recovery Time: 0.004 us

Ensures fast switching speeds and efficient performance.

Maximum Reverse Current: 0.1 uA

Provides low leakage current, optimizing power efficiency.

Reverse Test Voltage: 70 V

Offers a high reverse voltage rating for reliable operation.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for various environments.

Diode Type: RECTIFIER DIODE

Specifically designed for rectifying AC to DC, ensuring efficient power conversion.

Technical Specifications

Diodes & Rectifiers NSDEMP11XV6T5G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

2 BANKS, COMMON ANODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.2 V

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

2 A

No. of Elements:

4

No. of Phases:

1

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

.1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

80 V

Maximum Reverse Current:

.1 uA

Maximum Reverse Recovery Time:

.004 us

Reverse Test Voltage:

70 V

Sub-Category:

Other Diodes

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NSDEMP11XV6T5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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