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NLV37WZ16USG

Onsemi

NLV37WZ16USG by Onsemi

NLV37WZ16USG by Onsemi is a Logic Gate with 5.1ns Propagation Delay, 3 functions, and 8 terminals. It operates at 2.3V to 5.5V with -40 °C to 85°C temperature range, suitable for industrial applications requiring fast signal processing in compact designs.

Median Price

$0.363

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 30 parts In-Stock

1+ parts

$0.363

100+ parts

$0.136

1k+ parts

$0.103

10k+ parts

$0.080

30

$0.363

$0.136

$0.103

$0.080

DigiKey

USA . 14 parts In-Stock

1+ parts

$0.380

100+ parts

$0.191

1k+ parts

$0.109

10k+ parts

-

14

$0.380

$0.191

$0.109

-

Verical

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.088

10k+ parts

$0.074

3,000

-

-

$0.088

$0.074

Distributors (In-Stock)

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Digiode

USA . 2,203 parts In-Stock

1+ parts

$0.345

100+ parts

-

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2,203

$0.345

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Vyrian

USA . 7,972 parts In-Stock

1+ parts

-

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7,972

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Flip Electronics

USA . 6,000 parts In-Stock

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-

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6,000

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 143 parts In-Stock

1+ parts

$0.088

100+ parts

-

1k+ parts

-

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143

$0.088

-

-

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Vigor

Singapore . 285 parts In-Stock

1+ parts

$0.270

100+ parts

-

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285

$0.270

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-

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Corphita

USA . 778 parts In-Stock

1+ parts

$0.327

100+ parts

-

1k+ parts

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778

$0.327

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-

-

Component Stockers USA

USA . 24 parts In-Stock

1+ parts

$0.370

100+ parts

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24

$0.370

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QUARKTWIN TECHNOLOGY LTD

USA . 14,301 parts In-Stock

1+ parts

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14,301

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Infinite Electronics LLP (Excess)

. 13,811 parts In-Stock

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13,811

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TANS Electronics

Latvia . 6,552 parts In-Stock

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6,552

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Kulean Microsystems

USA . 5,663 parts In-Stock

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5,663

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Problanco Electronics

Mexico . 3,462 parts In-Stock

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3,462

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Microchip USA

USA . 3,004 parts In-Stock

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3,004

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SupplyDigital Components

Austria . 2,231 parts In-Stock

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2,231

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UHIMA Technologies

Türkiye . 567 parts In-Stock

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567

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Overview

Unleash the power of innovation with the NLV37WZ16USG logic gate by Onsemi. Crafted with precision and expertise, this product offers unparalleled quality and reliability. Ideal for a wide range of applications, this logic gate promises seamless performance and efficiency. Experience the value and benefits of this cutting-edge technology, designed to elevate your projects to new heights. Trust Onsemi for superior solutions that deliver exceptional results every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides good durability and protection for the internal components of the logic gates.

Propagation Delay At Nominal Supply: 5.1 ns

Low propagation delay ensures fast operation of the logic gates, making them suitable for time-critical applications.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving time and effort during manufacturing.

Nominal Supply Voltage / Vsup (V): 2.3

Operating at a low supply voltage of 2.3V makes the logic gates energy-efficient and suitable for battery-powered devices.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85 °C, the logic gates can withstand harsh environmental conditions and thermal stress.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the logic gates reliable and efficient in various applications.

Technical Specifications

Logic Gates NLV37WZ16USG attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

37WZ

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

2.3 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

3

No. of Inputs:

1

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.12,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Maximum Power Supply Current (ICC):

.01 mA

Propagation Delay At Nominal Supply:

5.1 ns

Propagation Delay (tpd):

8.8 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Screening Level:

AEC-Q100

Maximum Seated Height:

.9 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

2.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

2 mm

Trade Compliance

NLV37WZ16USG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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