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NLV37WZ07USG

Onsemi

NLV37WZ07USG by Onsemi

NLV37WZ07USG by Onsemi is a logic gate with 3 functions, 4.8 ns propagation delay, and 1.8V nominal voltage. Ideal for military applications due to its AEC-Q100 screening level and -55 to 125°C operating temperature range. Features include open-drain output characteristics, small outline package style, and dual terminal position for versatile integration in electronic systems.

Median Price

$0.097

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

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Arrow

USA . 3,000 parts In-Stock

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Verical

USA . 3,000 parts In-Stock

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Chip1Stop

Japan . 2,235 parts In-Stock

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$0.115

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$0.099

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$0.092

2,235

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$0.092

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Chip Stock

USA . 87,500 parts In-Stock

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Component Sense

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Flip Electronics

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Vyrian

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Digiode

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Corohmni

South Africa . 295 parts In-Stock

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Vigor

Singapore . 234 parts In-Stock

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$0.290

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Microchip USA

USA . 7,817 parts In-Stock

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$1.598

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AZTECH Wire

Italy . 953 parts In-Stock

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$18.570

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Metaverse IC Inc.

Canada . 24,000 parts In-Stock

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Perfect Parts

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Authorized Procurement Solutions

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Kulean Microsystems

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iodParts Technologies Inc.

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TANS Electronics

Latvia . 5,103 parts In-Stock

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SupplyDigital Components

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Lixinc

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QUARKTWIN TECHNOLOGY LTD

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GreenTree Electronics

Israel . 1,930 parts In-Stock

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Corphita

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Problanco Electronics

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UHIMA Technologies

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Futuretech Components

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Overview

Discover the NLV37WZ07USG by Onsemi, a premium Logic Gates product designed to elevate your electronic projects to new heights. Manufactured by Onsemi, a trusted name in the industry, this small outline, very thin profile logic gate offers unrivaled quality and reliability. With a fast propagation delay of 4.8 ns and an open-drain output characteristic, this product is perfect for a wide range of applications. Whether you're working on automotive electronics or industrial automation, the NLV37WZ07USG delivers exceptional performance and efficiency. Upgrade your projects today with the Onsemi NLV37WZ07USG and experience the difference.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection for the internal components of the logic gates.

Propagation Delay At Nominal Supply: 4.8 ns

Low propagation delay ensures fast signal processing and efficient operation.

Surface Mount: YES

Surface mount capability allows for easy and secure mounting on circuit boards.

No. of Functions: 3

Having multiple functions in one device increases circuit density and saves space.

Nominal Supply Voltage / Vsup (V): 1.8

Operates at a low voltage, making it energy efficient.

Maximum Operating Temperature: 125 °C

High maximum operating temperature ensures reliability in various environments.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity.

Technical Specifications

Logic Gates NLV37WZ07USG attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

2.3 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

3

No. of Inputs:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

OPEN-DRAIN

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.12,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Propagation Delay At Nominal Supply:

4.8 ns

Propagation Delay (tpd):

7.8 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Screening Level:

AEC-Q100

Maximum Seated Height:

.9 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

2 mm

Trade Compliance

NLV37WZ07USG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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