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NLAST4052DR2

Onsemi

NLAST4052DR2 by Onsemi

NLAST4052DR2 by Onsemi is a CMOS differential multiplexer with 4 channels. It operates at temperatures from -55 to 125 °C and has a max supply voltage of 5.5 V. With a package style of small outline, it is suitable for military-grade applications requiring fast switching times and low on-state resistance.

Median Price

$0.178

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 2,475 parts In-Stock

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-

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$0.185

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$0.153

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$0.137

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$0.185

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$0.137

Verical

USA . 2,475 parts In-Stock

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$0.171

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$0.171

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Digiode

USA . 1,100 parts In-Stock

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$0.144

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Mobius Materials

USA . 2,911 parts In-Stock

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$0.300

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$0.241

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Vyrian

USA . 6,109 parts In-Stock

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Corphita

USA . 800 parts In-Stock

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$0.137

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Vigor

Singapore . 325 parts In-Stock

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$0.150

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Corohmni

South Africa . 142 parts In-Stock

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$0.152

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AZTECH Wire

Italy . 754 parts In-Stock

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$21.450

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Kepictronics

USA . 22,500 parts In-Stock

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Metaverse IC Inc.

Canada . 22,500 parts In-Stock

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Kulean Microsystems

USA . 8,258 parts In-Stock

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SupplyDigital Components

Austria . 7,988 parts In-Stock

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TANS Electronics

Latvia . 4,577 parts In-Stock

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Microchip USA

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QUARKTWIN TECHNOLOGY LTD

USA . 2,840 parts In-Stock

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Problanco Electronics

Mexico . 2,526 parts In-Stock

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Continental Prestige Electronics

USA . 2,475 parts In-Stock

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UHIMA Technologies

Türkiye . 438 parts In-Stock

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Overview

Discover the NLAST4052DR2 by Onsemi, a top-quality multiplexer & switch that provides unmatched performance and reliability. Manufactured by Onsemi, a leader in electronic components, this product offers customers exceptional value and benefits. With its versatile applications and advanced technology, this differential multiplexer is a game-changer for any project. Trust Onsemi to deliver cutting-edge solutions for your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good durability and protection for the internal components of the multiplexer, making it a reliable choice for long-term use.

Surface Mount: YES

Surface mount capability allows for easy and efficient installation of the multiplexer onto circuit boards, saving time and effort during assembly.

Nominal Supply Voltage (Vsup): 3 V

The nominal supply voltage of 3V makes this multiplexer compatible with a wide range of applications and power sources.

No. of Channels: 4

With 4 channels, this multiplexer offers versatility and flexibility in managing and controlling multiple input signals, making it suitable for various signal routing tasks.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature ensures that the multiplexer can reliably function in demanding environments without overheating or performance degradation.

Technology: CMOS

The CMOS technology used in this multiplexer provides low power consumption, fast switching speeds, and high noise immunity, making it an efficient and reliable choice for signal processing.

Technical Specifications

Multiplexers & Switches NLAST4052DR2 attributes and parameters. Explore more Multiplexers & Switches devices from Onsemi

Specs

Other IC type:

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e0

Length:

9.9 mm

Maximum Negative Supply Voltage (Vsup):

-5.5 V

Minimum Negative Supply Voltage (Vsup):

0 V

Nominal Negative Supply Voltage (Vsup):

-3 V

No. of Channels:

4

No. of Functions:

1

No. of Terminals:

16

Nominal Off-state Isolation:

93 dB

Nominal On-state Resistance Match:

15 ohm

Maximum On-state Resistance (Ron):

37 ohm

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP16,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Power Supplies (V):

-3.3/GND,3.3/5

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Maximum Signal Current:

.05 A

Sub-Category:

Multiplexer or Switches

Maximum Supply Current (Isup):

.08 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.5 V

Nominal Supply Voltage (Vsup):

3 V

Surface Mount:

YES

Maximum Switch-off Time:

28 ns

Maximum Switch-on Time:

28 ns

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width (mm):

3.9 mm

Trade Compliance

NLAST4052DR2 Other Function Semiconductors trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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