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CD4052BM96E4

Texas Instruments

CD4052BM96E4 by Texas Instruments

CD4052BM96E4 by Texas Instruments is a CMOS differential multiplexer with 4 channels, 1050 ohm Ron, and 25 kHz bandwidth. It operates at -55 to 125 °C, has a 1.75 mm height, and is MILITARY grade suitable for signal switching applications requiring high isolation and low on-state resistance.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Vyrian

USA . 6,101 parts In-Stock

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Digiode

USA . 1,600 parts In-Stock

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Nova Conductors

Japan . 80 parts In-Stock

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One Stop Electronics

USA . 1,146 parts In-Stock

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$2.500

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Parana Technologies

USA . 454 parts In-Stock

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$2.826

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ChromeModa Solutions

Germany . 4,661 parts In-Stock

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$3.175

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IDEA Electronic Components Group

UK . 2,267 parts In-Stock

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$2.858

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Ampacity Inc.

Singapore . 974 parts In-Stock

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Semicontronic

India . 1,187 parts In-Stock

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$4.365

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Advanced Electronics

New Zealand . 100 parts In-Stock

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$5.123

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AZTECH Wire

Italy . 632 parts In-Stock

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Corohmni

South Africa . 77 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Argo Parts USA

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DigiPath Technology Company

USA . 2,129 parts In-Stock

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Corphita

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Bastille Electronics

Australia . 300 parts In-Stock

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Microchip USA

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Continental Prestige Electronics

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Overview

Experience seamless switching and high performance with the CD4052BM96E4 by Texas Instruments. Crafted with precision and expertise, this multiplexer offers reliable functionality and versatility for a wide range of applications. From audio equipment to industrial automation, this product ensures smooth operation and optimal signal routing. Trust in Texas Instruments' reputation for excellence and unlock the value and benefits that the CD4052BM96E4 brings to your projects. Invest in quality, efficiency, and innovation with this exceptional component.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides durability and protection for the internal components, making this product suitable for various environments.

Surface Mount: YES

Being surface mountable allows for easy and efficient PCB assembly, saving time and space in electronic circuits.

Nominal Supply Voltage (Vsup): 5 V

Operating at a standard 5V supply voltage makes integration with other components seamless and convenient.

No. of Channels: 4

Having 4 channels allows for versatile signal routing and switching capabilities, making this multiplexer suitable for a range of applications.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this multiplexer can operate reliably in harsh environmental conditions.

Technology: CMOS

Utilizing CMOS technology ensures low power consumption and high noise immunity, enhancing the overall performance of the multiplexer.

Technical Specifications

Multiplexers & Switches CD4052BM96E4 attributes and parameters. Explore more Multiplexers & Switches devices from Texas Instruments

Specs

Other IC type:

Nominal Bandwidth:

25 kHz

Maximum Input Voltage:

20.5 V

Minimum Input Voltage:

-.5 V

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e4

Length:

9.9 mm

Moisture Sensitivity Level (MSL):

1

Nominal Negative Supply Voltage (Vsup):

-5 V

Normal Position (V):

NC

No. of Channels:

4

No. of Functions:

1

No. of Terminals:

16

Nominal Off-state Isolation:

40 dB

Nominal On-state Resistance Match:

15 ohm

Maximum On-state Resistance (Ron):

1050 ohm

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output (V):

SEPARATE OUTPUT

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP16,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Power Supplies (V):

5/15

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Maximum Signal Current:

.01 A

Sub-Category:

Multiplexer or Switches

Maximum Supply Current (Isup):

3 mA

Maximum Supply Voltage (Vsup):

20 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage (Vsup):

5 V

Surface Mount:

YES

Maximum Switch-off Time:

720 ns

Maximum Switch-on Time:

720 ns

Switching (V):

BREAK-BEFORE-MAKE

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

3.9 mm

Trade Compliance

CD4052BM96E4 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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