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NLAS5223MNR2G

Onsemi

NLAS5223MNR2G by Onsemi

NLAS5223MNR2G by Onsemi is a CMOS SPDT switch with 2 functions, operating at a supply voltage of 1.65-3.6V. With a low on-state resistance of 0.05 ohm and high isolation of 65 dB, it's ideal for industrial applications requiring fast switching times (50 ns on, 30 ns off).

Median Price

$0.810

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

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DigiKey

USA . 1 parts In-Stock

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$1.030

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$1.030

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Flip Electronics (Authorized)

USA . 3,931 parts In-Stock

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Rochester

USA . 1,811 parts In-Stock

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$0.589

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$0.489

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$0.436

1,811

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$0.589

$0.489

$0.436

Distributors (In-Stock)

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Digiode

USA . 1,324 parts In-Stock

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$0.459

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$0.459

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Flip Electronics

USA . 3,931 parts In-Stock

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Vyrian

USA . 3,404 parts In-Stock

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Semi Source

USA . 2,811 parts In-Stock

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Q Components

USA . 1,730 parts In-Stock

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ComSIT Distribution GmbH

Germany . 1,217 parts In-Stock

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Cyclops Electronics Ltd

UK . 380 parts In-Stock

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Electronics Depot

USA . 84 parts In-Stock

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NPI Materials, Inc.

USA . 10 parts In-Stock

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Corphita

USA . 1,303 parts In-Stock

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$0.435

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Corohmni

South Africa . 69 parts In-Stock

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$0.483

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Perfect Parts

USA . 12,880 parts In-Stock

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Microchip USA

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SupplyDigital Components

Austria . 5,705 parts In-Stock

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Kulean Microsystems

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Problanco Electronics

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Kepictronics

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GreenTree Electronics

Israel . 2,435 parts In-Stock

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Authorized Procurement Solutions

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Assy Fe

Spain . 1,594 parts In-Stock

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UHIMA Technologies

Türkiye . 617 parts In-Stock

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TANS Electronics

Latvia . 484 parts In-Stock

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Overview

Enhance your electronic circuit designs with the NLAS5223MNR2G by Onsemi, a top-tier manufacturer known for quality and reliability. This multiplexer & switch offers seamless integration with its surface mount capability, 2 functions, and versatile applications. With a nominal supply voltage of 3V and industrial-grade temperature rating, this product ensures optimal performance in various settings. Experience the benefits of its separate output, low on-state resistance, and rapid switching times. Elevate your projects with the NLAS5223MNR2G and unlock endless possibilities in the world of electronics.

Feature Benefit Bullets

Surface Mount: YES

Surface mount technology allows for easy and convenient installation, saving time and effort.

No. of Functions: 2

Having multiple functions in one device provides versatility and flexibility in applications.

Nominal Supply Voltage (Vsup): 3 V

Operating at a nominal supply voltage of 3V ensures compatibility with a wide range of systems and circuits.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this multiplexer/switch can be used in demanding industrial environments.

Technology: CMOS

CMOS technology ensures low power consumption and high noise immunity, making it ideal for battery-powered applications.

Technical Specifications

Multiplexers & Switches NLAS5223MNR2G attributes and parameters. Explore more Multiplexers & Switches devices from Onsemi

Specs

Other IC type:

JESD-30 Code:

R-XQCC-N10

JESD-609 Code:

e4

Length:

1.8 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

2

No. of Terminals:

10

Nominal Off-state Isolation:

65 dB

Nominal On-state Resistance Match:

.05 ohm

Maximum On-state Resistance (Ron):

.3 ohm

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output (V):

SEPARATE OUTPUT

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

LCC10,.06X.07,16

Package Shape:

Package Style (Meter):

CHIP CARRIER, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.8/3.3

Qualification:

Not Qualified

Maximum Seated Height:

.8 mm

Sub-Category:

Multiplexer or Switches

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage (Vsup):

3 V

Surface Mount:

YES

Maximum Switch-off Time:

30 ns

Maximum Switch-on Time:

50 ns

Switching (V):

BREAK-BEFORE-MAKE

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

NO LEAD

Terminal Pitch:

.4 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

1.4 mm

Trade Compliance

NLAS5223MNR2G Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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