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NLAS5113DFT2G

Onsemi

NLAS5113DFT2G by Onsemi

NLAS5113DFT2G by Onsemi is a SPST switch with 6 terminals, operating b/w -40 to 85 °C. It has a low on-state resistance of 1.3 ohm and supports Vsup from 1.65V to 4.5V. Ideal for industrial applications requiring compact, surface-mount switches with precise voltage control.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 6,789 parts In-Stock

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Semtec, LLC

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Digiode

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AZTECH Wire

Italy . 419 parts In-Stock

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Problanco Electronics

Mexico . 7,635 parts In-Stock

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SupplyDigital Components

Austria . 3,977 parts In-Stock

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TANS Electronics

Latvia . 3,308 parts In-Stock

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Corphita

USA . 874 parts In-Stock

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Kulean Microsystems

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Vigor

Singapore . 212 parts In-Stock

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Microchip USA

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UHIMA Technologies

Türkiye . 99 parts In-Stock

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Corohmni

South Africa . 86 parts In-Stock

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Overview

Discover the NLAS5113DFT2G by Onsemi, a high-quality multiplexer that offers unmatched reliability and performance. With a wide range of applications in various industries, this product stands out for its durability and efficiency. Designed by a trusted manufacturer like Onsemi, customers can trust in the value and benefits it brings to their projects. From its compact package body to its versatile terminal position, this multiplexer delivers exceptional results while maintaining a competitive edge in the market. Elevate your projects with the NLAS5113DFT2G and experience the advantages it has to offer.

Feature Benefit Bullets

Package Body Material PLASTIC/EPOXY

Plastic/Epoxy material provides a lightweight and durable package, making the product suitable for various applications.

Surface Mount YES

The surface mount feature allows for easy and convenient installation on circuit boards, saving space and simplifying assembly.

Nominal Supply Voltage (Vsup) 4.2 V

Operates efficiently at a nominal supply voltage of 4.2V, ensuring compatibility with a wide range of systems.

Maximum Operating Temperature 85 °C

With a maximum operating temperature of 85 °C, this product can withstand high temperatures, suitable for industrial environments.

Width (mm) 1.25 mm

Compact width of 1.25mm allows for space-saving integration into electronic devices without compromising performance.

Switching (V) BREAK-BEFORE-MAKE

The break-before-make switching feature ensures seamless transition between different circuits, reducing the risk of short circuits and improving overall system reliability.

Technical Specifications

Multiplexers & Switches NLAS5113DFT2G attributes and parameters. Explore more Multiplexers & Switches devices from Onsemi

Specs

Other IC type:

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Length:

2 mm

Normal Position (V):

NO

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

6

Nominal On-state Resistance Match:

.4 ohm

Maximum On-state Resistance (Ron):

1.3 ohm

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP6,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.1 mm

Sub-Category:

Multiplexer or Switches

Maximum Supply Voltage (Vsup):

4.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage (Vsup):

4.2 V

Surface Mount:

YES

Switching (V):

BREAK-BEFORE-MAKE

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Width (mm):

1.25 mm

Trade Compliance

NLAS5113DFT2G Other Function Semiconductors trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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