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NLAS4717MR2

Onsemi

NLAS4717MR2 by Onsemi

NLAS4717MR2 by Onsemi is a CMOS SPDT switch with 2 functions, 10 terminals, and 3V nominal voltage. It features a max on-state resistance of 4.5 ohm and is ideal for industrial applications requiring separate outputs and high isolation levels. With a compact square package design and dual terminal position, it offers fast switching times of 30ns on-state and 40ns off-state.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 6,372 parts In-Stock

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Digiode

USA . 2,336 parts In-Stock

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AZTECH Wire

Italy . 543 parts In-Stock

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$11.960

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Problanco Electronics

Mexico . 2,729 parts In-Stock

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Kulean Microsystems

USA . 2,676 parts In-Stock

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SupplyDigital Components

Austria . 2,408 parts In-Stock

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Corphita

USA . 1,362 parts In-Stock

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TANS Electronics

Latvia . 545 parts In-Stock

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UHIMA Technologies

Türkiye . 524 parts In-Stock

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Corohmni

South Africa . 311 parts In-Stock

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Microchip USA

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Vigor

Singapore . 194 parts In-Stock

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Overview

Elevate your electronic projects with the NLAS4717MR2 by Onsemi. Manufactured with top-quality materials and cutting-edge technology, this multiplexer offers seamless switching between functions with a compact design that fits any application. From industrial automation to consumer electronics, this versatile component provides reliable performance and precise control. Trust Onsemi's expertise in creating innovative solutions that add value to your projects. Experience the benefits of seamless integration and superior functionality with the NLAS4717MR2.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material, suitable for various applications.

Surface Mount: YES

Allows for easy and efficient assembly onto circuit boards.

No. of Functions: 2

Provides versatility and flexibility in switching operations.

Nominal Supply Voltage (Vsup): 3 V

Optimal voltage for efficient operation.

Maximum Operating Temperature: 85 °C

Can withstand high temperatures, making it suitable for industrial use.

Technology: CMOS

Efficient and low power consumption technology.

Technical Specifications

Multiplexers & Switches NLAS4717MR2 attributes and parameters. Explore more Multiplexers & Switches devices from Onsemi

Specs

Other IC type:

JESD-30 Code:

S-PDSO-G10

JESD-609 Code:

e0

Length:

3 mm

Normal Position (V):

NC

No. of Channels:

1

No. of Functions:

2

No. of Terminals:

10

Nominal Off-state Isolation:

75 dB

Nominal On-state Resistance Match:

.1 ohm

Maximum On-state Resistance (Ron):

4.5 ohm

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output (V):

SEPARATE OUTPUT

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP10,.19,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

235

Power Supplies (V):

2/5

Qualification:

Not Qualified

Maximum Seated Height:

1.1 mm

Sub-Category:

Multiplexer or Switches

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.8 V

Nominal Supply Voltage (Vsup):

3 V

Surface Mount:

YES

Maximum Switch-off Time:

40 ns

Maximum Switch-on Time:

30 ns

Switching (V):

BREAK-BEFORE-MAKE

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Lead (Sn80Pb20)

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width (mm):

3 mm

Trade Compliance

NLAS4717MR2 Other Function Semiconductors trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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