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NLAS4053DT

Onsemi

NLAS4053DT by Onsemi

NLAS4053DT by Onsemi is a 16-terminal CMOS multiplexer with 3 functions. It operates at temperatures from -55 to 125 °C and has a max on-state resistance of 37 ohm. Ideal for military-grade applications requiring high isolation and fast switching times.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 3,260 parts In-Stock

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Digiode

USA . 253 parts In-Stock

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AZTECH Wire

Italy . 523 parts In-Stock

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Kulean Microsystems

USA . 7,157 parts In-Stock

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SupplyDigital Components

Austria . 4,605 parts In-Stock

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TANS Electronics

Latvia . 4,591 parts In-Stock

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Microchip USA

USA . 4,211 parts In-Stock

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Problanco Electronics

Mexico . 3,154 parts In-Stock

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Corphita

USA . 1,790 parts In-Stock

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UHIMA Technologies

Türkiye . 490 parts In-Stock

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Corohmni

South Africa . 367 parts In-Stock

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Vigor

Singapore . 172 parts In-Stock

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Overview

Unlock a world of possibilities with the NLAS4053DT by Onsemi. This multiplexer & switch offers unparalleled quality and reliability, backed by Onsemi's reputation for excellence in semiconductor manufacturing. Ideal for a wide range of applications, this versatile product provides value and benefits to customers seeking seamless integration and efficient performance. Experience the advantages of Onsemi technology with the NLAS4053DT.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection for the internal components of the multiplexer, making it reliable for long-term use.

Surface Mount: YES

Surface mount capability makes it easy to integrate the multiplexer into electronic circuits, saving space and simplifying installation.

No. of Functions: 3

Having 3 functions in one device allows for efficient and compact circuit designs, reducing the need for multiple components.

Nominal Supply Voltage (Vsup): 3 V

Operating at a nominal supply voltage of 3V ensures compatibility with a wide range of electronic systems, making it versatile for various applications.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125 °C, this multiplexer can withstand harsh environmental conditions without malfunctioning.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making this multiplexer energy-efficient and reliable for signal processing.

Technical Specifications

Multiplexers & Switches NLAS4053DT attributes and parameters. Explore more Multiplexers & Switches devices from Onsemi

Specs

Other IC type:

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e4

Length:

5 mm

Maximum Negative Supply Voltage (Vsup):

-5.5 V

Minimum Negative Supply Voltage (Vsup):

0 V

Nominal Negative Supply Voltage (Vsup):

-3 V

No. of Channels:

2

No. of Functions:

3

No. of Terminals:

16

Nominal Off-state Isolation:

93 dB

Nominal On-state Resistance Match:

15 ohm

Maximum On-state Resistance (Ron):

37 ohm

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP16,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

-3,3/5

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Signal Current:

.05 A

Sub-Category:

Multiplexer or Switches

Maximum Supply Current (Isup):

.08 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.5 V

Nominal Supply Voltage (Vsup):

3 V

Surface Mount:

YES

Maximum Switch-off Time:

28 ns

Maximum Switch-on Time:

28 ns

Switching (V):

BREAK-BEFORE-MAKE

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Width (mm):

4.4 mm

Trade Compliance

NLAS4053DT Other Function Semiconductors trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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